zxmp6a17n8 Diodes, Inc., zxmp6a17n8 Datasheet - Page 6

• Manufacturer Part Number: zxmp6a17n8
• Description: 60v P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Typical Characteristics - continued
Test Circuits
ZXMP6A17N8
Document Number DS32076 Rev 1 - 2
Capacitance v Drain-Source Voltage
1000
800
600
400
200
0
0.1
V
G
-V
DS
Q
GS
Basic gate charge waveform
t
Switching time waveforms
r
- Drain - Source Voltage (V)
C
t
(on)
ISS
t
d(off)
1
Q
C
Q
G
OSS
GD
Charge
C
RSS
t
r
t
10
(on)
V
f = 1MHz
GS
t
d(on)
= 0V
www.diodes.com
90%
10%
V
V
6 of 8
DS
GS
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
Switching time test circuit
0
Gate charge test circuit
Pulse width
Duty factor 0.1%
2
12V
R
G
4
0.2 F
Diodes Incorporated
Q - Charge (nC)
1 S
V
A Product Line of
regulator
6
Current
GS
50k
I
G
V
GS
8
R
Same as
D.U.T
10
D
D.U.T
V
12
DS
I
V
D
DS
ZXMP6A17N8
= -2.3A
I
14
V
D
= -30V
DS
V
DD
16
© Diodes Incorporated
18
March 2010