zxmp4a57e6 Diodes, Inc., zxmp4a57e6 Datasheet - Page 5

• Manufacturer Part Number: zxmp4a57e6
• Description: 40v P-channel Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Typical Characteristics
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
0.01
0.01
100
Typical Transfer Characteristics
0.1
0.1
0.1
10
10
10
1
1
0.01
On-Resistance v Drain Current
1
2
T = 25°C
T = 25°C
0.1
-V
-V
T = 150°C
2.5V
Output Characteristics
DS
GS
-I
D
0.1
Drain-Source Voltage (V)
Gate-Source Voltage (V)
Drain Current (A)
3
1
3V
10V
1
T = 25°C
3.5V
V
DS
-V
= -10V
4V
4
GS
10
10
-V
4.5V
5V
4.5V
4V
GS
3.5V
www.diodes.com
2.5V
3V
10V
7V
5V
5 of 8
1E-3
1E-4
0.01
Normalised Curves v Temperature
0.01
1.6
1.4
1.2
1.0
0.8
0.6
0.1
0.1
10
10
1
Source-Drain Diode Forward Voltage
1
-50
T = 150°C
0.2
0.1
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
T = 150°C
Diodes Incorporated
0
0.4
Drain-Source Voltage (V)
Source-Drain Voltage (V)
A Product Line of
0.6
1
50
V
I
D
V
I
GS
D
= -250uA
10V
GS
= - 4A
= V
= -10V
0.8
T = 25°C
DS
100
ZXMP4A57E6
10
1.0
V
5V
GS
4.5V
4V
2V
3.5V
R
3V
2.5V
= 0V
V
DS(on)
GS(th)
-V
© Diodes Incorporated
GS
150
1.2
March 2011