sup90n10-8m8p Vishay, sup90n10-8m8p Datasheet

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sup90n10-8m8p

Manufacturer Part Number
sup90n10-8m8p
Description
N-channel 100-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Part Number:
SUP90N10-8M8P
Quantity:
23 100
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Part Number:
SUP90N10-8M8P
Quantity:
70 000
Part Number:
sup90n10-8m8p-E3
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sup90n10-8m8p-E3
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Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 74644
S-71689-Rev. A, 13-Aug-07
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
(BR)DSS
100
Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free)
(V)
0.0088 at V
r
DS(on)
a
T O-220AB
T op V i e w
GS
G D S
J
a
(Ω)
= 175 °C)
= 10 V
c
N-Channel 100-V (D-S) MOSFET
I
D
90
(A)
d
C
Q
= 25 °C, unless otherwise noted
g
97
(Typ)
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• 100 % R
• Power Supply
G
- Secondary Synchronous Rectification
Industrial
Primary Switch
N-Channel MOSFET
Symbol
Symbol
T
R
J
R
V
V
E
D
S
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
SUP90N10-8m8P
- 55 to 175
Limit
Limit
± 20
300
3.75
100
240
180
90
90
0.5
60
40
d
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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sup90n10-8m8p Summary of contents

Page 1

... V (V) r (Ω) (BR)DSS DS(on) 0.0088 100 GS T O-220AB Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUP90N10-8m8P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... 0.05 0.04 0.03 0.02 0. ° 8000 6400 4800 3200 1600 100 SUP90N10-8m8P Vishay Siliconix ° ° 125 ° Drain Current (A) D Transconductance T = 150 ° °C A 4.0 5.2 6.4 7.6 8 Gate-to-Source Voltage (V) GS On-resistance vs ...

Page 4

... SUP90N10-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 V 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Total Gate Charge (nC) g Gate Charge 100 T = 150 ° ...

Page 5

... S-71689-Rev. A, 13-Aug-07 1000 100 ° 0 0 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP90N10-8m8P Vishay Siliconix *Limited by r DS(on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r is specified GS GS DS(on) ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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