sup90n10-8m8p Vishay, sup90n10-8m8p Datasheet
sup90n10-8m8p
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sup90n10-8m8p Summary of contents
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... V (V) r (Ω) (BR)DSS DS(on) 0.0088 100 GS T O-220AB Ordering Information: SUP90N10-8m8P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...
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... SUP90N10-8m8P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...
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... 0.05 0.04 0.03 0.02 0. ° 8000 6400 4800 3200 1600 100 SUP90N10-8m8P Vishay Siliconix ° ° 125 ° Drain Current (A) D Transconductance T = 150 ° °C A 4.0 5.2 6.4 7.6 8 Gate-to-Source Voltage (V) GS On-resistance vs ...
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... SUP90N10-8m8P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 2.0 V 1.5 1.0 0 Junction Temperature (°C) J On-Resistance vs. Junction Temperature Total Gate Charge (nC) g Gate Charge 100 T = 150 ° ...
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... S-71689-Rev. A, 13-Aug-07 1000 100 ° 0 0 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case SUP90N10-8m8P Vishay Siliconix *Limited by r DS(on °C C Single Pulse Drain-to-Source Voltage ( minimum V at which r is specified GS GS DS(on) ...
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... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...