sup90n15-18p Vishay, sup90n15-18p Datasheet

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sup90n15-18p

Manufacturer Part Number
sup90n15-18p
Description
N-channel 150-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SUP90N15-18P
Manufacturer:
ST
Quantity:
20 000
Part Number:
sup90n15-18p-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
sup90n15-18p-E3
Quantity:
70 000
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
d. Package limited.
Document Number: 69935
S-80181-Rev. A, 04-Feb-08
PRODUCT SUMMARY
V
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
(BR)DSS
150
Ordering Information: SUP90N15-18P-E3 (Lead (Pb)-free)
(V)
0.018 at V
r
DS(on)
a
T O-220AB
GS
T op V i e w
J
a
G D S
(Ω)
= 175 °C)
= 10 V
c
N-Channel 150-V (D-S) MOSFET
I
D
90
(A)
d
C
= 25 °C, unless otherwise noted
Q
g
64
(Typ)
T
T
T
L = 0.1 mH
T
A
C
C
C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
c
FEATURES
APPLICATIONS
• TrenchFET
• 175 °C Junction Temperature
• 100 % R
• Primary Side Switch
• Industrial
Symbol
Symbol
T
R
J
R
V
V
E
I
g
I
P
, T
DM
I
AS
thJC
GS
thJA
DS
AS
D
D
and UIS Tested
®
stg
Power MOSFET
G
N-Channel MOSFET
- 55 to 175
D
S
Limit
Limit
± 20
375
SUP90N15-18P
3.75
150
180
125
90
0.4
75
50
40
d
b
Vishay Siliconix
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
RoHS
COMPLIANT
1

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sup90n15-18p Summary of contents

Page 1

... V (V) r (Ω) (BR)DSS DS(on) 0.018 150 GS T O-220AB Ordering Information: SUP90N15-18P-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 175 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...

Page 2

... SUP90N15-18P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

Page 3

... T = 125 °C C 0.01 0. 6000 5000 4000 3000 T = 150 °C A 2000 1000 ° SUP90N15-18P Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... SUP90N15-18P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Total Gate Charge (nC) g Gate Charge 0.8 0.2 - 0.4 - 1.0 - 1 Temperature (°C) J Threshold Voltage 100 T = 150 ° 0.1 0.01 0.001 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage www ...

Page 5

... Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SUP90N15-18P Vishay Siliconix 100 125 T - Temperature (°C) J Power Derating*, Junction-to-Case ...

Page 6

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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