sup90n04 Vishay, sup90n04 Datasheet

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... DS DS(on) 0.0033 0.0041 4 TO-220AB Top View Ordering Information: SUP90N04-3m3P-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Avalanche Current a Single Avalanche Energy a Maximum Power Dissipation ...

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... SUP90N04-3m3P Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance c Total Gate Charge ...

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... D Transconductance Document Number: 65902 S10-0632-Rev. A, 22-Mar-10 0.0040 0.0035 0.0030 0.0025 0.0020 1.5 2.0 0.10 0.08 0.06 0.04 0. °C C 0.00 2.4 3 125 ° SUP90N04-3m3P Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current T = 150 ° ° Gate-to-Source Voltage (V) GS On-Resistance vs ...

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... SUP90N04-3m3P Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 150 ° 0.1 0.0 0.3 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 8000 6000 4000 2000 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 2 1.7 1.4 1.1 0.8 0 Junction Temperature (°C) J On-Resistance vs ...

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... S10-0632-Rev. A, 22-Mar-10 1000 Limited by R 100 ° 0.1 0.01 0.01 0.1 0 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case SUP90N04-3m3P Vishay Siliconix * DS(on °C BVDSS Limited A Single Pulse Drain-to-Source Voltage ( > minimum V at which R is specified GS GS ...

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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...