si7454dp-t1 Vishay, si7454dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7454dp-t1
• Description: N-channel 100-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless noted
Document Number: 71618
S-51773-Rev. C, 31-Oct-05
0.05
0.04
0.03
0.02
0.01
0.00
30
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 7.8 A
0.2
On-Resistance vs. Drain Current
= 50 V
6
5
V
SD
Q
T
J
g
- Source-to-Drain Voltage (V)
= 150
0.4
I
D
- Total Gate Charge (nC)
Gate Charge
- Drain Current (A)
12
10
˚
C
0.6
V
GS
18
15
= 6.0 V
0.8
T
V
J
GS
= 25
24
20
1.0
= 10 V
˚
C
1.2
30
25
2500
2000
1500
1000
0.06
0.05
0.04
0.03
0.02
0.01
0.00
2.4
2.0
1.6
1.2
0.8
0.4
500
- 50
0
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 7.8 A
10
= 10 V
C
2
T
rss
0
V
V
J
GS
DS
- Junction Temperature (
20
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
Capacitance
4
50
C
30
Vishay Siliconix
C
oss
iss
I
75
D
6
= 7.8 A
Si7454DP
40
100
˚
www.vishay.com
C)
8
50
125
150
10
60
3