si7434dp-t1 Vishay, si7434dp-t1 Datasheet - Page 3

• Manufacturer Part Number: si7434dp-t1
• Description: N-channel 250-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 72579
S-51565-Rev. B, 31-Oct-05
0.30
0.24
0.18
0.12
0.06
0.00
50
10
10
1
8
6
4
2
0
0.0
0
0
V
I
D
Source-Drain Diode Forward Voltage
DS
= 3.8 A
0.2
On-Resistance vs. Drain Current
= 100 V
V
8
7
V
GS
SD
Q
= 6 V
g
- Source-to-Drain Voltage (V)
T
0.4
I
D
- Total Gate Charge (nC)
J
= 150
- Drain Current (A)
Gate Charge
16
14
˚
C
0.6
24
21
0.8
V
GS
T
32
28
J
= 10 V
1.0
= 25
˚
C
New Product
1.2
40
35
2500
2000
1500
1000
500
0.25
0.20
0.15
0.10
0.05
0.00
2.5
2.0
1.5
1.0
0.5
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
= 3.8 A
= 10 V
50
2
T
V
0
J
V
DS
- Junction Temperature (
GS
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
25
100
Capacitance
4
50
C
C
C
Vishay Siliconix
oss
iss
rss
150
I
75
D
6
= 3.8 A
Si7434DP
˚
100
www.vishay.com
C)
200
8
125
150
250
10
3