si7478dp Vishay, si7478dp Datasheet - Page 3

• Manufacturer Part Number: si7478dp
• Description: N-channel 60-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72913
S-71596-Rev. C, 30-Jul-07
0.012
0.010
0.008
0.006
0.004
0.002
0.000
60
10
10
1
8
6
4
2
0
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
0.2
10
20
On-Resistance vs. Drain Current
= 20 A
= 30 V
V
T
J
SD
Q
= 150 °C
g
-
I
0.4
20
D
40
-
Source-to-Drain Voltage (V)
-
Total Gate Charge (nC)
Gate Charge
Drain Current (A)
0.6
30
60
0.8
40
80
V
V
GS
GS
T
= 4.5 V
J
= 10 V
= 25 °C
1.0
100
50
New Product
1.2
120
60
10000
8000
6000
4000
2000
0.020
0.016
0.012
0.008
0.004
0.000
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0
0
-
0
50
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
oss
-
V
I
D
25
10
GS
= 20 A
V
V
DS
2
= 10 V
GS
T
C
J
0
-
rss
-
-
20
Drain-to-Source Voltage (V)
Junction Temperature (
Gate-to-Source Voltage (V)
Capacitance
25
4
30
I
50
Vishay Siliconix
D
C
= 20 A
iss
6
75
Si7478DP
40
www.vishay.com
˚
100
C)
8
50
125
60
150
10
3