si7980dp Vishay, si7980dp Datasheet
si7980dp
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si7980dp Summary of contents
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... Bottom View Ordering Information: Si7980DP-T1-E3 (Lead (Pb)-free) Si7980DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Source-Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current ...
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... Si7980DP Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current ...
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... GEN ° Channel dI/dt = 100 A/µ Channel dI/dt = 100 A/µ Si7980DP Vishay Siliconix a Typ. Min. Max Ch-1 17 Ch-2 22 Ch-2 10 Ch-1 2.5 Ch-2 3.4 Ch-1 2 Ch-2 2.6 Ch-1 0.2 1.1 2.2 Ch-2 0.2 1.3 2.6 Ch-1 9 ...
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... Si7980DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.5 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.026 0.024 0.022 0.020 GS 0.018 0.016 Drain Current (A) D On-Resistance vs. Drain Current ...
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... BVDSS A Single Pulse Limited 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si7980DP Vishay Siliconix 0.060 0.048 0.036 0.024 0.012 0.000 Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si7980DP Vishay Siliconix CHANNEL-1 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Case Temperature (°C) C Power Derating, Junction-to-Case * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 68391 S-83039-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.05 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7980DP Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Si7980DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted thru 0.0 0.6 1 Drain-to-Source Voltage (V) DS Output Characteristics 0.020 0.018 0.016 0.014 0.012 0.010 DrainCurrent(A) D On-Resistance vs. Drain Current ...
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... BVDSS °C A Limited Single Pulse 0.01 0 Drain-to-Source Voltage ( > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient Si7980DP Vishay Siliconix Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage ...
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... Si7980DP Vishay Siliconix CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 27.0 21.6 16.2 10.8 5.4 0 Case Temperature (°C) C Power Derating, Junction-to-Case * The power dissipation P is based dissipation limit for cases where additional heatsinking is used used to determine the current rating, when this rating falls below the package limit ...
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... Document Number: 68391 S-83039-Rev. C, 29-Dec- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 0.05 0. Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Si7980DP Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...