sia923edj Vishay, sia923edj Datasheet

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sia923edj

Manufacturer Part Number
sia923edj
Description
Dual P-channel 20 V D-s Mosfet
Manufacturer
Vishay
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
sia923edj-T1-GE3
Quantity:
70 000
Company:
Part Number:
sia923edj-T1-GE3
Quantity:
119
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
Document Number: 66803
S10-1535-Rev. A, 19-Jul-10
Ordering Information: SiA923EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
V
DS
- 20
(V)
PowerPAK SC-70-6 Dual
2.05 mm
6
D
0.054 at V
0.070 at V
0.104 at V
0.165 at V
1
5
G
R
2
D
DS(on)
1
4
S
S
GS
GS
GS
GS
1
2
1
J
()
= - 4.5 V
= - 2.5 V
= - 1.8 V
= - 1.5 V
D
= 150 °C)
b, f
G
2
Dual P-Channel 20 V (D-S) MOSFET
1
2
2.05 mm
D
2
3
I
- 4.5
- 4.5
- 4.5
- 1.5
D
Part # code
(A)
a
a
a
d, e
A
= 25 °C, unless otherwise noted
Q
Marking Code
Steady State
9.5 nC
g
T
T
T
T
T
T
T
T
T
T
C
C
C
C
C
A
A
A
A
A
(Typ.)
t  5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
D K X
X X X
Lot Traceability
and Date code
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• New Thermally Enhanced PowerPAK
• Typical ESD Protection: 2500 V
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
• Charger Switches and Load Switches for Portable
• DC/DC Converters
Symbol
Symbol
T
R
R
J
V
V
Definition
Package
- Small Footprint Area
- Low On-Resistance
Devices
I
P
, T
I
DM
I
thJA
thJC
DS
GS
D
S
D
stg
G
1
g
Tested
®
Power MOSFET
Typical
12.5
P-Channel MOSFET
52
- 55 to 150
- 4.5
- 4.5
- 1.6
1.9
1.2
- 4.5
- 4.5
- 4.5
Limit
- 20
- 15
260
± 8
7.8
5
a, b, c
a, b, c
S
D
b, c
b, c
b, c
1
1
a
a
a
Maximum
G
65
16
Vishay Siliconix
2
SiA923EDJ
®
SC-70
P-Channel MOSFET
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
S
D
2
2
1

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sia923edj Summary of contents

Page 1

... 2. Ordering Information: SiA923EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range ...

Page 2

... SiA923EDJ Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b Dynamic Total Gate Charge ...

Page 3

... On-Resistance vs. Drain Current and Gate Voltage Document Number: 66803 S10-1535-Rev. A, 19-Jul- ° 1 2.0 2.5 3.0 1500 1200 = 2 4 SiA923EDJ Vishay Siliconix - 150 ° ° ...

Page 4

... SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 4 Total Gate Charge (nC) g Gate Charge 100 T = 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.75 0.65 0.55 0.45 0.35 0. Temperature (°C) ...

Page 5

... V > minimum V at which DS(on) Safe Operating Area, Junction-to-Ambient 100 125 150 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper J(max) SiA923EDJ Vishay Siliconix 100 μ 100 100 is specified ...

Page 6

... SiA923EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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