Description:
The NTE7226 is a high voltage, high speed power MOSFET and IGBT driver with independent high
and low side referenced output channels in a 14−Lead DIP type package. HVIC and latch immune
CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with
standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current
buffer stage designed for minimum driver cross−conduction. Propagation delays are matched to sim-
plify use in high frequency applications. The floating channel can be used to drive an N−Channel
power MOSFET or IGBT in the high side configuration which operates up to 500 volts.
Features:
D Floating Channel Designed for Bootstrap Operation
D Gate Drive Supply Range from 10V to 20V
D Undervoltage Lockout for Both Channels
D 3.3V Logic Compatible
D CMOS Schmitt−Triggered Inputs with Pull−Down
D Cycle by Cycle Edge−Triggered Shutdown Logic
D Matched Propagation Delay for Both Channels
D Outputs in Phase with Inputs
Absolute Maximum Ratings: (Note 1)
High Side Floating Supply Voltage, V
High Side Floating Supply Offset Voltage, V
High Side Floating Output Voltage, V
Low Side Fixed Supply Voltage, V
Low Side Output Voltage, V
Logic Supply Voltage, V
Logic Supply Offset Voltage, V
Logic Input Voltage (HIN, LIN, & SD), V
Maximum Allowable Offset Supply Voltage Transient, dV
Package Power Dissipation (T
Note 1. Absolute Maximum Ratings indicate sustained limits beyond which damage to the device
Fully Operational to +500V
Tolerant to Negative Transient Voltage
dV/dt Immune
Separate Logic Supply Range from 3.3V to 20V
Logic an Power Ground ±5V Offset
may occur. All voltage parameters are absolute voltages referenced to COM. The thermal
resistance and power dissipation ratings are measured under board mounted and still air
conditions.
High Voltage, High Speed MOSFET/IGBT Driver
DD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
LO
w/High and Low Side Outputs
14−Lead DIP Type Package
A
SS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
≤ +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CC
Integrated Circuit
HO
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
IN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE7226
S
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
s
/dt
. . . . . . . . . . . . . . . . . . . . . . . . . .
V
V
SS
CC
V
V
S
−0.3 to V
−0.3 to V
B
−25 to V
−0.3 to V
−0.3 to V
−25 to V
−0.3 to 525V
−0.3 to +25V
CC
CC
DD
SS
B
B
50V/ns
+0.3V
+0.3V
+0.3V
+0.3V
+0.3V
+25V
1.6W