auirf1324s-7ptrr International Rectifier Corp., auirf1324s-7ptrr Datasheet - Page 2

• Manufacturer Part Number: auirf1324s-7ptrr
• Description: Automotive Q101 24v Single N-channel Hexfet Power Mosfet In A D2-pak 7p Package
• Manufacturer: International Rectifier Corp.

Notes:

‚
ƒ
V
∆V
R
V
gfs
R
I
I
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
I
I
V
t
Q
I
t
Static Characteristics @ T
Dynamic Characteristics @ T
Diode Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
DS(on)
GS(th)
G
iss
oss
rss
oss
oss
SD
g
gs
gd
sync
rr
temperature. Package limitation current is 240A. Note that current
above this value.
Calculated continuous current based on maximum allowable junction
Repetitive rating; pulse width limited by max. junction
Limited by T
temperature.
2
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
http://www.irf.com/technical-info/appnotes/an-1140.pdf
R
(BR)DSS
G
eff. (ER) Effective Output Capacitance (Energy Related) –––
eff. (TR) Effective Output Capacitance (Time Related)
= 25Ω, I
/∆T
J
AS
Jmax
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
= 160A, V
, starting T
Parameter
GS
J
=10V. Part not recommended for use
= 25°C, L = 0.018mH
Ãd
Parameter
Parameter
J
= 25°C (unless otherwise stated)
J
= 25°C (unless otherwise stated)
g
- Q
gd
)
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.023 –––
–––
270
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.0
24
„
…
†
‡
ˆ
‰
mended footprint and soldering techniques refer to application note #AN-994.
I
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
as C
C
SD
oss
oss
θ
oss
7700
3380
1930
4780
4970
≤ 160A, di/dt ≤ 600A/µs, V
0.80
–––
–––
–––
–––
–––
–––
–––
180
122
240
––– 429
–––
–––
3.0
2.0
47
58
19
86
93
71
74
83
92
eff. (TR) is a fixed capacitance that gives the same charging time
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
while V
1636
-200
–––
–––
–––
250
200
252
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
107
110
120
140
–––
1.0
4.0
1.3
DS
20
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
V/°C
mΩ
µA
nA
nC
nC
pF
ns
ns
V
V
S
Ω
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig.5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
J
J
J
J
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
GS
GS
G
= 75A
= 75A, V
= 160A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
DD
=2.7Ω
= V
= 50V, I
= 24V, V
= 19V, V
=12V
= 19V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V
= 16V
= 10V
= 0V
= 0V, V
= 0V, V
≤ V
GS
(BR)DSS
, I
D
g
g
DS
D
S
DS
DS
DSS
D
D
= 250µA
GS
GS
= 160A, V
= 250µA
= 160A
=0V, V
= 160A
= 0V to 19V
= 0V to 19V
DSS
, T
.
Conditions
Conditions
Conditions
= 0V
= 0V, T
J
V
I
di/dt = 100A/µs
.
F
≤ 175°C.
R
= 160A
D
GS
= 20V,
g
= 5mA
J
= 10V
GS
= 125°C
= 0V
i
hÃ
, See Fig.11
www.irf.com
g
g
g
G
g
D
S