auirf2607ztrr International Rectifier Corp., auirf2607ztrr Datasheet

auirf2607ztrr

Manufacturer Part Number

auirf2607ztrr

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRF2607ZTRR.pdf (13 pages)

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Description

Specifically designed for Automotive applications, this

HEXFET

techniques to achieve extremely low on-resistance per

silicon area. Additional features of this design are a 175°C

junction operating temperature, fast switching speed and

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a wide

variety of other applications.

Features

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

Thermal Resistance

www.irf.com

STG

@ T

Advanced Process Technology

Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

(Tested )

= 25°C

= 100°C Continuous Drain Current, V

= 25°C

Power MOSFET utilizes the latest processing

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

) is 25°C, unless otherwise specified.

AUTOMOTIVE MOSFET

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

HEXFET

See Fig.12a, 12b, 15, 16

AUIRFR2607Z

300 (1.6mm from case )

D (Silicon Limited)

D (Package Limited)

Typ.

–––

(BR)DSS

DS(on)

10 lbf

AUIRFR2607Z

D-Pak

Drain

-55 to + 175

in (1.1N

0.72

180

110

± 20

max.

typ.

Power MOSFET

Max.

1.38

110

Source

PD - 96323

17.6m

22m

45A

42A

75V

Units

W/°C

°C/W

°C

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auirf2607ztrr Summary of contents

Page 1

Features Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * l Description Specifically designed for Automotive applications, this ® HEXFET ...

Page 2

Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). ‚ Limited starting T = 25°C, ...

Page 4

VGS TOP 15V 10V 8.0V 7.0V 100 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 60µs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000.0 100.0 T ...

Page 5

0V MHZ C iss = SHORTED C rss = C gd 2000 C oss = 1600 Ciss 1200 800 400 ...

Page 6

LIMITED BY PACKAGE 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 ...

Page 7

D.U 20V Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 8

Duty Cycle = Single Pulse 100 0.01 10 0.05 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 100 TOP Single Pulse BOTTOM 1% Duty Cycle 30A ...

Page 9

D.U.T + ƒ ‚ - SD Fig 17. Fig 18a. Switching Time Test Circuit V DS 90% 10 Fig 18b. Switching Time Waveforms www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ ...

Page 10

10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... Ordering Information Base part Package Type AUIRFR2607Z DPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Complete Part Number AUIRFR2607Z AUIRFR2607ZTR AUIRF2607ZTRL AUIRF2607ZTRR www.irf.com ...

Page 13

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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