auirfu5305 International Rectifier Corp., auirfu5305 Datasheet

auirfu5305

Manufacturer Part Number

auirfu5305

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRFU5305.pdf (13 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFU5305

Manufacturer:

Quantity:

12 500

Current page: 1 of 13
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Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal

resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T

is 25°C, unless otherwise specified.

Features

Description

Specifically designed for Automotive applications, this Cellular

Planar design of HEXFET® Power MOSFETs utilizes the

latest processing techniques to achieve low on-resistance per

silicon area. This benefit combined with the fast switching

speed and ruggedized device design that HEXFET power

MOSFETs are well known for, provides the designer with an

extremely efficient and reliable device for use in Automotive

and a wide variety of other applications.

dv/dt

Thermal Resistance

Absolute Maximum Ratings

HEXFET

*Qualification standards can be found at http://www.irf.com/

STG

θJC

θJA

@ T

Advanced Planar Technology

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

= 25°C

= 100°C

= 25°C

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Junction-to-Case

Junction-to-Ambient (PCB mount) ∗∗

Junction-to-Ambient ***

Ã h

Ãeh

Parameter

AUTOMOTIVE MOSFET

@ -10V

Gate

AUIRFR5305

D-Pak

Typ.

300 (1.6mm from case )

–––

-55 to + 175

Drain

HEXFET

Max.

-110

0.71

110

± 20

280

-5.0

-31

-22

-16

(BR)DSS

DS(on)

AUIRFU5305

AUIRFR5305

AUIRFU5305

Max.

110

1.4

I-Pak

max.

Power MOSFET

Source

0.065Ω

PD-96341

Units

-31A

W/°C

Units

°C/W

-55V

V/ns

°C

12/06/10

)

Related parts for auirfu5305

auirfu5305 Summary of contents

Page 1

... AUIRFU5305 ® HEXFET Power MOSFET D V (BR)DSS R max. DS(on D-Pak I-Pak AUIRFR5305 AUIRFU5305 Gate Drain Source Max. -31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 - 175 300 (1.6mm from case ) Typ. Max. ––– 1.4 ––– ...

Page 2

AUIRFR/U5305 Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher ...

Page 4

AUIRFR/U5305 1000 VGS TOP - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V 100 10 -4.5V 20µs PULSE WIDTH T = 25° 0 Drain-to-Source Voltage (V) DS ...

Page 5

1MHz iss rss oss ds gd 2000 C iss C oss 1500 1000 C rss ...

Page 6

AUIRFR/U5305 100 125 T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.10 0.05 0.1 0.02 0.01 ...

Page 7

D.U -20V t p 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Q G -10V Charge Fig 13a. ...

Page 8

AUIRFR/U5305 D.U.T + ‚ - Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Reverse Recovery Current Re-Applied Voltage *** 8 Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations ...

Page 9

AUIRFR/U5305 9 ...

Page 10

AUIRFR/U5305 10 www.irf.com ...

Page 11

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 12

... AUIRFR/U5305 Ordering Information Base part Package Type AUIRFR5305 DPak AUIRFU5305 IPak 12 Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRFR5305 AUIRFR5305TR AUIRF5305TRL AUIRF5305TRR AUIRFU5305 www.irf.com ...

Page 13

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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