auirfl014n International Rectifier Corp., auirfl014n Datasheet

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auirfl014n

Manufacturer Part Number
auirfl014n
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRFL014N
Manufacturer:
IR
Quantity:
12 500
www.irf.com
Description
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated
in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still
air conditions. Ambient temperature (T
Features
Specifically designed for Automotive applications, this
Cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined with
the fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety
of other applications.
I
I
I
I
P
P
V
E
I
E
dv/dt
T
T
R
R
HEXFET
*Qualification standards can be found at http://www.irf.com/
Thermal Resistance
D
D
D
DM
AR
J
STG
D
D
GS
AS
AR
θJA
θJA
@ T
@ T
@ T
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT Rating
150°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
@T
A
A
A
A
A
= 25°C
= 25°C
= 70°C
®
= 25°C
= 25°C
is a registered trademark of International Rectifier.
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation (PCB Mount)
Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
Ù
A
) is 25°C, unless otherwise specified.
Parameter
Parameter
e
GS
GS
GS
AUTOMOTIVE GRADE
™g
@ 10V
@ 10V
@ 10V
d
g
g
g
g
g
G
Gate
G
Typ.
D
S
90
50
AUIRFL014N
-55 to + 150
AUIRFL014N
HEXFET
SOT-223
V
R
I
Drain
Max.
D
2.7
1.9
1.5
2.1
1.0
8.3
±20
1.7
0.1
5.0
15
48
(BR)DSS
D
DS(on)
Max.
®
120
60
max.
Power MOSFET
Source
S
0.16Ω
1.9A
Units
Units
55V
W/°C
°C/W
08/24/11
V/ns
mJ
mJ
°C
W
W
A
V
A
1

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auirfl014n Summary of contents

Page 1

... 10V 10V GS ™ Ù ™g e Parameter g AUIRFL014N ® HEXFET Power MOSFET D V 55V (BR)DSS R max. 0.16Ω DS(on SOT-223 AUIRFL014N D S Drain Source Max. Units 2.7 1.9 A 1.5 15 2.1 W 1.0 W 8.3 W/°C ± 1.7 A 0.1 mJ 5.0 V/ns - 150 °C Typ. Max. Units 90 120 ° ...

Page 2

... AUIRFL014N Static Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage ...

Page 3

... IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. SOT-223 Class M1A(+/- 50V ) (per AEC-Q101-002) Class H1A(+/- 350V ) (per AEC-Q101-001) Class C5(+/- 2000V ) (per AEC-Q101-005) AUIRFL014N Automotive †† MSL1 ††† ††† ††† Yes 3 ...

Page 4

... AUIRFL014N 100 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 150° 25° 0 Gate-to-Source Voltage (V) GS Fig 3. Typical Transfer Characteristics 4 4.5V 20μs PULSE WIDTH T = 25° ...

Page 5

... OPERATION IN THIS AREA LIMITED 25° 150° Single Pulse A 0.1 1.0 1.2 1.4 1 Fig 8. Maximum Safe Operating Area AUIRFL014N V = 44V 28V 11V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G Gate-to-Source Voltage ...

Page 6

... AUIRFL014N Charge Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50KΩ .2μF 12V .3μF D.U. 3mA I G Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient ...

Page 7

... Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms www.irf.com 120 15V 100 80 DRIVER Starting T , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy V (BR)DSS AUIRFL014N I D TOP 1.5A 2.7A BOTTOM 3.4A = 25V 50 75 100 125 J Vs. Drain Current A 150 7 ...

Page 8

... AUIRFL014N Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com ...

Page 9

... OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. www.irf.com 4.10 (.161) 1.85 (.072) 3.90 (.154) 1.65 (.065) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. 7.10 (.279) 6.90 (.272) 15.40 (.607) 11.90 (.469) 4 14.40 (.566) 12.40 (.488) 3 AUIRFL014N 0.35 (.013) 0.25 (.010) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) 50.00 (1.969) MIN. 18.40 (.724) MAX ...

Page 10

... AUIRFL014N Ordering Information Base part Package Type AUIRFL014N SOT-223 10 Standard Pack Form Quantity Tube 95 Tape and Reel 2500 Complete Part Number AUIRFL014N AUIRFL014NTR www.irf.com ...

Page 11

... Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR’s Technical Assistance Center 101 N. Sepulveda Blvd., El Segundo, California 90245 www.irf.com http://www.irf.com/technical-info/ WORLD HEADQUARTERS: Tel: (310) 252-7105 AUIRFL014N 11 ...

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