auirfl024n International Rectifier Corp., auirfl024n Datasheet

auirfl024n

Manufacturer Part Number

auirfl024n

Description

Hexfet Power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRFL024N.pdf (11 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRFL024N

Manufacturer:

Quantity:

12 500

Current page: 1 of 11
Download datasheet (185Kb)

Features

• Advanced Planar Technology

• Low On-Resistance

• Dynamic dV/dT Rating

• 150°C Operating Temperature

• Fast Switching

• Fully Avalanche Rated

• Repetitive Avalanche Allowed up to

• Lead-Free, RoHS Compliant

• Automotive Qualified*

Description

Specifically designed for Automotive applications, this

cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined

with the fast switching speed and ruggedized device

design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient

and reliable device for use in Automotive and a wide

variety of other applications.

www.irf.com

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T

HEXFET

*Qualification standards can be found at http://www.irf.com/

dv/dt

Thermal Resistance

STG

θJA

Tjmax

@ T

= 25°C

= 70°C

= 25°C Power Dissipation (PCB Mount)

is a registered trademark of International Rectifier.

Continuous Drain Current, V

Pulsed Drain Current

Linear Derating Factor (PCB Mount)

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

Storage Temperature Range

Junction-to-Ambient (PCB mount, steady state)

) is 25°C, unless otherwise specified.

Ã™

Parameter

™

@ 10V

Gate

(BR)DSS

DS(on)

HEXFET

Typ.

AUIRFL024N

SOT-223

-55 to + 150

Drain

Max.

11.2

± 20

214

4.0

2.8

2.3

2.1

1.0

8.3

2.8

0.1

5.0

max.

Power MOSFET

Max.

120

75mΩ

Source

2.8A

55V

mW/°C

Units

°C/W

V/ns

°C

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