auirls3034 International Rectifier Corp., auirls3034 Datasheet

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auirls3034

Manufacturer Part Number
auirls3034
Description
Hexfetpower Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLS3034
Manufacturer:
IR
Quantity:
12 500
Part Number:
auirls3034-7P
Manufacturer:
IR
Quantity:
12 500
Part Number:
auirls3034-7TRL
Manufacturer:
IR
Quantity:
12 500
Part Number:
auirls3034-7TRLPBF
Manufacturer:
IR
Quantity:
7 000
Part Number:
auirls3034-7TRR
Manufacturer:
IR
Quantity:
12 500
Features
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (T
www.irf.com
Description
Specifically designed for Automotive applications, this HEXFET
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
HEXFET
*Qualification standards can be found at http://www.irf.com/
I
I
I
I
P
V
E
I
E
dv/dt
T
T
Thermal Resistance
R
R
D
D
D
DM
AR
J
STG
D
GS
AS
AR
θJC
θJA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
Symbol
Symbol
C
C
C
C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
are a 175°C junction operating temperature, fast
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Junction-to-Case
Junction-to-Ambient (PCB Mount)
kl
Parameter
Parameter
f
GS
GS
GS
AUTOMOTIVE GRADE
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
j
A
) is 25°C, unless otherwise specified.
®
G
e
Gate
G
D
S
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
10lbf
AUIRLS3034
V
R
I
I
-55 to + 175
D (Silicon Limited)
D (Package Limited)
D
DSS
DS(on)
AUIRLS3034
x
243
Max.
343
in (1.1N
1372
195
375
255
300
HEXFET
2.5
±20
4.6
Drain
D
D
c
2
c
Pak
G
x
m)
typ.
max.
S
Max.
0.4
40
®
Power MOSFET
Source
195A
1.4mΩ
1.7mΩ
343A
40V
S
Units
Units
W/°C
°C/W
V/ns
mJ
mJ
°C
W
A
V
A
97716
08/22/11
1

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auirls3034 Summary of contents

Page 1

... AUIRLS3034 ® HEXFET Power MOSFET V D DSS R typ. DS(on) max (Silicon Limited (Package Limited Pak AUIRLS3034 G D Gate Drain Max. c 343 c 243 195 1372 375 2.5 ±20 255 See Fig. 14, 15, 22a, 22b, 4.6 - 175 300 x x 10lbf in (1.1N m) Typ ...

Page 2

Static Electrical Characteristics @ T Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance R Internal Gate Resistance G(int) I Drain-to-Source ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant www.irf.com † Comments: qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level Pak ...

Page 4

VGS ≤ 60μs PULSE WIDTH TOP 15V 10V Tj = 25°C 8.0V 10000 4.5V 3.5V 3.0V 2.7V BOTTOM 2.5V 1000 100 10 2. Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10000 1000 ...

Page 5

175°C 100 25°C 10 1.0 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 350 Limited By Package 300 250 200 150 100 50 0 ...

Page 6

D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed ...

Page 7

250μA 1 1.0mA ID = 1.0A 0.5 0.0 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 16. Threshold Voltage ...

Page 8

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 21 D.U 20V V GS 0.01 Ω Fig 22a. Unclamped Inductive Test Circuit ≤ ...

Page 9

2 2 www.irf.com (Dimensions are shown in millimeters (inches)) 9 ...

Page 10

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 10 1.60 (.063) 1.50 ...

Page 11

... Ordering Information Base part number Package Type AUIRLS3034 D2Pak www.irf.com Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 Tape and Reel Right 800 Complete Part Number AUIRLS3034 AUIRLS3034TRL AUIRLS3034TRR 11 ...

Page 12

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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