auirl7732s2 International Rectifier Corp., auirl7732s2 Datasheet

auirl7732s2

Manufacturer Part Number

auirl7732s2

Description

Directfet power Mosfet

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRL7732S2.pdf (11 pages)

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

auirl7732s2TRPBF

Manufacturer:

Quantity:

4 100

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Description

The AUIRL7732S2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET

low gate charge as well as the lowest on-state resistance in a package that has the footprint which is 38% smaller than an SO-8 and only 0.7mm profile.

The DirectFET

red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET

package allows dual sided cooling to maximize thermal transfer in automotive power systems.

This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET

platform coupled with the latest silicon technology allows the AUIRL7732S2 to offer substantial system level savings and performance improvement

specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized

together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques

to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175°C operating junction temperature and high

repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive

applications.

www.irf.com

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T

HEXFET

•

Thermal Resistance

Applicable DirectFET Outline and Substrate Outline

STG

θJA

θJCan

θJ-PCB

@ T

(tested)

= 25°C

= 100°C

is a registered trademark of International Rectifier.

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (Thermally Limited)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Peak Soldering Temperature

Operating Junction and

Storage Temperature Range

Junction-to-Ambient

Junction-to-Can

Junction-to-PCB Mounted

Linear Derating Factor

Ãg

Parameter

AUTOMOTIVE GRADE

@ 10V (Silicon Limited)

) is 25°C, unless otherwise specified.

Typ.

D (Silicon Limited)

12.5

–––

1.0

AUIRL7732S2TR1

(BR)DSS

DS(on)

See Fig. 18a,18b,16,17

DirectFET

AUIRL7732S2TR

-55 to + 175

Max.

0.27

± 16

230

124

260

typ.

2.2

max.

Power MOSFET ‚

Max.

–––

3.7

DirectFET™ ISOMETRIC

packaging to achieve

5.0mΩ

6.6mΩ

22nC

58A

40V

packaging

Units

°C/W

W/°C

04/07/11

°C

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auirl7732s2 Summary of contents

Page 1

... AUIRL7732S2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7732S2 can be utilized together with the AUIRL7736M2 as a control/sync MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area . Additional features of this MOSFET are 175° ...

Page 2

Static Characteristics @ T J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ΔV /ΔT Gate Threshold Voltage Coefficient GS(th) J gfs Forward Transconductance ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant www.irf.com Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension ...

Page 4

PULSE WIDTH Tj = 25°C 100 10 1 2.5V 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 125° ...

Page 5

50μA 1 250μ 1.0mA 1.0A 1.0 0.5 -75 -50 - 100 125 150 175 Temperature ( °C ) ...

Page 6

OPERATION IN THIS AREA LIMITED (on) 100μsec 100 1msec 10msec 25° 175°C Single Pulse Drain-to-Source Voltage (V) Fig 13. Maximum Safe Operating Area ...

Page 7

TOP Single Pulse BOTTOM 1.0% Duty Cycle 35A 100 Starting Junction Temperature (°C) Fig 17. Maximum Avalanche Energy vs. Temperature ...

Page 8

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations G=GATE D=DRAIN S=SOURCE www.irf.com ...

Page 9

Please see AN-1035 for DirectFET assembly details and stencil and substrate design recommendations ® Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com Part Marking "AU" = GATE AND AUTOMOTIVE MARKING LOGO PART NUMBER ...

Page 10

... Tape & Reel Dimension (Showing component orientation). ® NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as AUIRL7732S2TR). For 1000 parts on 7" reel, order AUIRL7732S2TR1 REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL METRIC METRIC CODE ...

Page 11

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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