auirlu3114z International Rectifier Corp., auirlu3114z Datasheet

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auirlu3114z

Manufacturer Part Number
auirlu3114z
Description
Hexfet Power Mosfet
Manufacturer
International Rectifier Corp.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AUIRLU3114Z
Manufacturer:
IR
Quantity:
12 500
www.irf.com
Features
l
l
Description
HEXFET
*Qualification standards can be found at http://www.irf.com/
Specifically designed for Automotive applications, this
HEXFET
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features com-
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
Absolute Maximum Ratings
is not implied.
I
I
I
I
P
V
E
E
I
E
T
T
R
R
R
Thermal Resistance
D
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AS
AR
θJC
θJA
θJA
@ T
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Logic Level
Lead-Free, RoHS Compliant
Automotive Qualified *
@T
(Tested )
C
C
C
C
®
= 25°C
= 100°C
= 25°C
= 25°C
is a registered trademark of International Rectifier.
®
Power MOSFET utilizes the latest processing
functional operation of the device at these or any other condition beyond those indicated in the specifications
Continuous Drain Current, V
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
j
Ã
AUTOMOTIVE GRADE
Parameter
Parameter
GS
GS
GS
g
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
@ 10V (Package Limited)
d
i
G
h
D
S
Gate
G
V
R
I
I
D (Silicon Limited)
D (Package Limited)
AUIRLR3114Z
DSS
DS(on)
Typ.
D-Pak
–––
–––
–––
See Fig.12a, 12b, 15, 16
300(1.6mm from case)
max @ 10V
-55 to + 175
max @ 4.5V
HEXFET
130
Drain
89
Max.
0.95
500
140
130
260
±16
42
D
k
k
AUIRLU3114Z
AUIRLR3114Z
AUIRLU3114Z
Max.
1.05
110
40
I-Pak
®
Power MOSFET
Source
130A
4.9mΩ
6.5mΩ
S
40V
42A
PD - 96381
Units
Units
W/°C
°C/W
mJ
mJ
°C
W
A
V
A
1

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auirlu3114z Summary of contents

Page 1

... AUIRLR3114Z AUIRLU3114Z ® HEXFET Power MOSFET V DSS R max @ 10V 4.9mΩ DS(on) max @ 4.5V 6.5mΩ I 130A D (Silicon Limited (Package Limited) I-Pak D-Pak AUIRLU3114Z AUIRLR3114Z G D Gate Drain Source Max. k 130 500 140 0.95 ±16 130 260 See Fig.12a, 12b, 15 175 300(1.6mm from case) Typ ...

Page 2

Static Electrical Characteristics @ T V Drain-to-Source Breakdown Voltage (BR)DSS ΔV /ΔT Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/ †† Exceptions to AEC-Q101 requirements are noted in the qualification ...

Page 4

VGS TOP 15V 10V 8.0V 4.5V 100 3.5V 3.0V 2.7V BOTTOM 2. 2.5V ≤ 60μs PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 ...

Page 5

0V, C iss = SHORTED C rss = oss = 10000 C iss C oss 1000 C rss 100 1 ...

Page 6

Limited By Package 100 100 125 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 ...

Page 7

V DS D.U 20V Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. Basic Gate ...

Page 8

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ 25°C and Tstart = 150°C. 0.1 1.0E-06 1.0E-05 150 TOP Single Pulse BOTTOM 1.0% Duty Cycle I ...

Page 9

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 17. www.irf.com Driver Gate Drive P.W. D.U. Reverse Recovery „ Current - + D.U. Re-Applied G + Voltage - ...

Page 10

10 www.irf.com ...

Page 11

www.irf.com 11 ...

Page 12

TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS ...

Page 13

... Ordering Information Base part Package Type AUIRLR3114Z DPak AUIRLU3114Z IPak www.irf.com Standard Pack Form Quantity Tube 75 Tape and Reel 2000 Tape and Reel Left 3000 Tape and Reel Right 3000 Tube 75 Complete Part Number AUIRLR3114Z AUIRLR3114ZTR AUIRLR3114ZTRL AUIRLR3114ZTRR AUIRLU3114Z 13 ...

Page 14

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or ...

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