auirg7ch80k6b-m International Rectifier Corp., auirg7ch80k6b-m Datasheet

auirg7ch80k6b-m

Manufacturer Part Number

auirg7ch80k6b-m

Description

Automotive Grade

Manufacturer

International Rectifier Corp.

Datasheet

1.AUIRG7CH80K6B-M.pdf (3 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

AUIRG7CH80K6B-M

Manufacturer:

Quantity:

12 500

Current page: 1 of 3
Download datasheet (90Kb)

•

Features

•

Note:

www.irf.com

Benefits

•

Die Size

Emiter Pad Size (Included Gate Pad)

Gate Pad Size

Area Total / Active

Thickness

Wafer Size

Flat Position

Maximum-Possible Chips per Wafer

Passivation Frontside

Front Metal

Backside Metal

Die Bond

Reject Ink Dot Size

Recommended Storage Environment

Mechanical Parameter

This IR product is 100% tested at wafer level and is manufactured using established, mature and well characterized processes. Due to

restrictions in die level processing, die may not be equivalent to standard package products and are therefore offered with a conditional

performance guarantee. The above data sheet is based on IR sample testing under certain predetermined and assumed conditions,

and are provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed package and use

conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured using IR’s established

processes. Programs for customer-specified testing are available upon request. IR has experienced assembly yields of generally 95%

or greater for individual die; however, customer’s results will vary. Estimates such as those described and set forth in this data sheet for

semiconductor die will vary depending on a number of packaging, handling, use and other factors. Sold die may not perform on an

equivalent basis to standard package products and are therefore offered with a limited warranty as described in IR’s applicable standard

terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available

upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can

bepurchased as known good die.

Technology qualified in sup-TO247 package according to AEC-Q101.

100% Tested at Probe

Designed for Automotive Application

Solderable Front Metal

Low V

Low Switching Losses

Maximum Junction Temperature 175 °C

Short Circuit Rated

Square RBSOA

Positive V

Tight Parameter Distribution

High Efficiency in a Wide Range of Applications

Suitable for a Wide Range of Switching Frequencies

due to Low V

Rugged Transient Performance for Increased

Reliability

Excellent Current Sharing in Parallel Operation

Enables Double side cooling and higher current density

Eliminates wire bonds and Improves Reliability

AUIRG7CH80K6B

Chip Type

CE (on)

Trench IGBT Technology

CE (on)

Temperature Coefficient

and Low Switching Losses

1200V

VCE

AUTOMOTIVE GRADE

200A

ICn

Applications

•

Medium/High Power Inverters

HEV/EV Inverter

AUIRG7CH80K6B-M

12 X 12 mm2

Al (0.1µm), Ti (0.1µm), Ni (0.4µm), Ag (0.6µm)

<6 months at an ambient temperature of 23°C

Die Size

Al (4µm), Ti (0.1µm), Ni (0.2µm), Ag (0.6µm)

Store in original container, in dry Nitrogen,

Electrically conductive epoxy or solder

Round, 1mm diameter

See Die Drawing

0.51mm min (black, center)

12.075x12.075

144/114

n-channel

140

150

Silicon Nitride

89 pcs

Package

Wafer

Degrees

mm2

01/12/10

µm

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auirg7ch80k6b-m Summary of contents

Page 1

... All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which are available upon request. For customers requiring a particular parameter to be guaranteed, special testing can be carried out or product can bepurchased as known good die. ** Technology qualified in sup-TO247 package according to AEC-Q101. www.irf.com AUTOMOTIVE GRADE AUIRG7CH80K6B-M ** Applications • Medium/High Power Inverters • HEV/EV Inverter ...

Page 2

... AUIRG7CH80K6B-M Maximum Ratings Parameter V Collector-Emitter Voltage Collector Current, Limited by T C(Nominal) I Clamped Inductive Load Current LM V Gate Emitter Voltage Operating Junction and Storage Temperature J STG Static Characteristics (Tested on wafers Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Collector-to-Emitter Saturation Voltage ...

Page 3

... For further information please contact your local IR Sales office or email your enquiry to http://die.irf.com IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com AUIRG7CH80K6B-M Data and specifications subject to change without notice. Qualification Standards can be found on IR’s Web site. TAC Fax: (310) 252-7903 Visit us at www ...

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