am27c128-200dib Advanced Micro Devices, am27c128-200dib Datasheet - Page 6

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am27c128-200dib

Manufacturer Part Number
am27c128-200dib
Description
112db 192khz 24-bit Sch Dac
Manufacturer
Advanced Micro Devices
Datasheet
connection to all devices in the array and connected to
the READ line from the system control bus. This as-
sures that all deselected memory devices are in their
low-power standby mode and that the output pins are
only active when data is desired from a particular mem-
ory device.
System Applications
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
MODE SELECT TABLE
Notes:
1. V
2. X = Either V
3. A1–A8 and A10–12 = V
4. See DC Programming Characteristics for V
6
Mode
Read
Output Disable
Standby (TTL)
Standby (CMOS)
Program
Program Verify
Program Inhibit
Autoselect
(Note 3)
H
= 12.0 V
Manufacturer Code
Device Code
IH
0.5 V.
or V
IL
.
IL
, A13 = X
PP
V
voltage during programming.
CC
CE#
V
V
V
V
V
V
V
X
IH
IH
IL
IL
IL
IL
IL
0.3 V
Am27C128
OE#
V
V
V
V
V
X
X
X
X
IH
IL
IL
IL
IL
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 µF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
V
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on EPROM ar-
rays, a 4.7 µF bulk electrolytic capacitor should be used
between V
tion of the capacitor should be close to where the
power supply is connected to the array.
CC
and V
PGM#
V
V
X
X
X
X
X
X
X
IH
IL
CC
SS
and V
to minimize transient effects. In addition,
V
A0
V
X
X
X
X
X
X
X
IH
IL
SS
for each eight devices. The loca-
A9
V
V
X
X
X
X
X
X
X
H
H
V
V
V
V
X
X
X
X
X
X
PP
PP
PP
PP
Outputs
High Z
High Z
High Z
High Z
D
D
01h
16h
D
OUT
OUT
IN

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