njg1116bhb3 New Japan Radio Co.,Ltd, njg1116bhb3 Datasheet

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njg1116bhb3

Manufacturer Part Number
njg1116bhb3
Description
Njg1116bhb3 2.1ghz Band Lna Gaas Mmic
Manufacturer
New Japan Radio Co.,Ltd
Datasheet
Ver.2004-10-04
GENERAL DESCRIPTION
FEATURES
PIN CONFIGURATION
W-CDMA cellular phone .This IC has the function which
passes LNA, and high gain mode or low gain mode can
be chosen.
Low voltage operation
Low current consumption
High gain
Low noise figure
Pout at 1dB Gain Compression point
High input IP3
Small package USB8-B3
NJG1116BHB3 is a LNA IC designed for 2.1GHz band
An ultra small and ultra thin package of USB8 is adopted.
Note: Specifications and description listed in this catalog are subject to change without prior notice.
5
6
7
2.1GHz Band LNA GaAs MMIC
(Top View)
4
8
14.4dB typ.
-3dBm typ.
2.0mA typ.
2uA typ.
1.5dB typ.
-14.5dBm typ.
+11.0dBm typ.
+2.7V typ.
(Package size: 1.5mmx1.5mmx0.75mm)
+3dBm typ.
1 Pin INDEX
3
2
1
@V
@V
@V
@V
@V
@V
@V
@V
CTL
CTL
CTL
CTL
CTL
CTL
CTL
CTL
Pin Connection
1.V
2.GND
3.RF OUT
4.GND
5.RF IN
6.GND
7. V
8. GND
=2.7V
=0V
=2.7V, f RF =2140MHz
=2.7V, f RF =2140MHz
=2.7V, f RF =2140MHz
=0V, f RF =2140MHz
=2.7V, f RF =2140MHz
=0V, f RF =2140MHz
INV
CTL
PACKAGE OUTLINE
NJG1116BHB3
NJG1116BHB3
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njg1116bhb3 Summary of contents

Page 1

... Band LNA GaAs MMIC GENERAL DESCRIPTION NJG1116BHB3 is a LNA IC designed for 2.1GHz band W-CDMA cellular phone .This IC has the function which passes LNA, and high gain mode or low gain mode can be chosen. An ultra small and ultra thin package of USB8 is adopted. ...

Page 2

... NJG1116BHB3 ABSOLUTE MAXIMUM RATINGS PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage Input power Power dissipation Operating temperature Storage temperature ELECTRICAL CHARACTERISTICS 1 (DC) PARAMETERS SYMBOL Operating voltage Inverter supply voltage Control voltage (High) Control voltage (Low) Operating current1 Operating current2 ...

Page 3

... IIP3_1 Pin=-36dBm =2.7V, V =0V, freq=2140MHz INV CTL CONDITIONS freq Gain2 NF2 -1dB(IN)2 F1=fRF, f2=fRF+100kHz, IIP3_2 Pin=-36dBm NJG1116BHB3 =+25° =50Ω, TEST CIRCUIT MIN TYP MAX UNITS 2110 2140 2170 MHz 13.2 14.4 15 1.5 1.9 dB -16.5 -14.5 - dBm -5 ...

Page 4

... NJG1116BHB3 TERMINAL INFOMATION No. SYMBOL 1 VINV Inverter voltage supplies terminal. 2 GND Ground terminal. (0V) RF output terminal. The RF signal is output through external matching circuit connected 3 RFOUT to this terminal. Please connected inductance L3 and power supply as shown in test circuit, since this terminal is also the terminal of LNA power supply. ...

Page 5

... CTL -20 -15 - 2.2 2.25 2 =2.7V, Ta= INV CTL IIP3 - 2.16 2.18 2.2 NJG1116BHB3 Gain vs. Pin ( freq=2.14GHz =2.7V, Ta=25 DD INV CTL P-1dB(IN)=-13.3dBm 2 -40 -35 -30 -25 -20 -15 -10 Pin(dBm ) Pout, IM3 vs. Pin ( freq=2.14GHz =2.7V, Ta=25 ...

Page 6

... NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) G ain freq=2.14GHz Gain 2 P-1dB(IN) vs freq=2.14GHz -10 P-1dB(IN) -12 -14 -16 -18 -20 - =2.7V, PRF=OFF) INV 3 1 ...

Page 7

... =2.7V ) INV CTL 3.5 2.5 1.5 0 100 100 o C) NJG1116BHB3 OIP3, IIP3 vs. Temperature ( freq=2.14+2.1401GHz, P in=-36dBm INV OIP3 9.0 8.0 IIP3 7.0 6.0 -50 - Ambient Tem perature ( C) VSWR vs. Tem perature ( freq=2.14G Hz =2. INV ...

Page 8

... NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA High Gain Mode) S11, S22 VSWR S11, S22 (100MHz ~ 20GHz S21, S12 Zin, Zout S21, S12 (100MHz ~ 20GHz) Ver.2004-10-04 ...

Page 9

... V =0V, Ta= INV CTL 18.0 12 16.0 10 14.0 8 12.0 6 10.0 4 8.0 2 6.0 IIP3 0 4.0 2.0 -2 2.16 2.18 2.2 NJG1116BHB3 Gain vs. Pin ( freq=2.14G Hz =2.7V, V =0V, Ta=25 DD INV CTL P-1dB(IN)=+10.5dBm -40 -30 -20 -10 0 Pin(dBm ) Pout, IM3 vs. Pin ( freq=2.14G Hz =2.7V, V =0V, Ta= CTL 0 Pout IM 3 -40 -30 ...

Page 10

... NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) G ain freq=2.14GHz, V =2.7V ain - -10 2 2.5 3 3 P-1dB(IN) vs freq=2.14G Hz, V =2.7V, V INV P-1dB(IN 2.5 3 3 VSW R vs freq=2.14G Hz, V =2.7V, V INV 4 3 ...

Page 11

... C) =2.7V, V =0V) INV C TL 3.5 2.5 1.5 0 100 o C) =0V, PRF=OFF 100 o C) NJG1116BHB3 OIP3, IIP3 vs. Temperature =V DD INV 4.0 2.0 0.0 OIP3 IIP3 -50 - Ambient Temperature ( C) VSWR vs. Tem perature ( freq=2.14G Hz =2.7V INV -50 - ...

Page 12

... NJG1116BHB3 ELECTRICAL CHARACTERISTICS (LNA Low Gain Mode) S11, S22 VSWR S11, S22 (100MHz ~ 20GHz S21, S12 Zin, Zout S21, S12 (100MHz ~ 20GHz) Ver.2004-10-04 ...

Page 13

... CTL Ver.2004-10-04 (Top View) 4 GND RFIN 5 GND 6 VCTL 7 8 GND (Top View INV NJG1116BHB3 L4 C1 RFOUT 6.8nH 1.5pF RF OUT 3 L3 1.8nH V =2.7V DD GND C2 2 1000pF VINV 1 V =2.7V INV 1 Pin INDEX Parts ID Comment L1, L3 TDK (MLK1005) ...

Page 14

... NJG1116BHB3 PACKAGE OUTLINE (USB8-B3) (TOP VIEW) TERMINAL TREAT PCB Molding material UNIT WEIGHT Cautions on using this product This product contains Gallium-Arsenide (GaAs) which is a harmful material. • Do NOT eat or put into mouth. • Do NOT dispose in fire or break up this product. • Do NOT chemically make gas or powder with this product. ...

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