semix-151gd126hds semikron, semix-151gd126hds Datasheet
semix-151gd126hds
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semix-151gd126hds Summary of contents
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... SEMiX101GD126HDs ® SEMiX 13 Trench IGBT Modules SEMiX101GD126HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • ...
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... SEMiX101GD126HDs ® SEMiX 13 Trench IGBT Modules SEMiX101GD126HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • ...
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... SEMiX101GD126HDs Fig. 1 Typ. output characteristic, inclusive R Fig. 3 Typ. turn-on /-off energy = f (I Fig. 5 Typ. transfer characteristic © by SEMIKRON Fig. 2 Rated current vs. temperature I CC'+ EE' ) Fig. 4 Typ. turn-on /-off energy = Fig. 6 Typ. gate charge characteristic 03.04.2008 = ...
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... SEMiX101GD126HDs Fig. 7 Typ. switching times vs Fig. 9 Typ. transient thermal impedance Fig. 11 Typ. CAL diode peak reverse recovery current 4 Fig. 8 Typ. switching times vs. gate resistor R Fig. 10 Typ. CAL diode forward charact., incl. R Fig. 12 Typ. CAL diode recovery charge 03.04.2008 G CC'+EE' © by SEMIKRON ...
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... SEMiX101GD126HDs SEMiX 13 GD This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or gurantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON 03.04.2008 5 ...