scn2c60 SemiWell Semiconductor Co., Ltd., scn2c60 Datasheet

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scn2c60

Manufacturer Part Number
scn2c60
Description
Sensitive Gate Silicon Controlled Rectifiers
Manufacturer
SemiWell Semiconductor Co., Ltd.
Datasheet
Absolute Maximum Ratings
Sensitive Gate
Silicon Controlled Rectifiers
Features
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
Oct, 2002. Rev. 2
Symbol
Repetitive Peak Off-State Voltage : 600V
R.M.S On-State Current ( I
Low On-State Voltage (1.2V(Typ.)@I
I
P
T(RMS)
V
V
I
T
I
I
P
T(AV)
G(AV)
FGM
TSM
RGM
DRM
I
T
STG
GM
2
J
SemiWell
t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
2
t
for Fusing
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
Semiconductor
Parameter
T(RMS)
= 1.5 A )
( T
TM
J
= 25°C unless otherwise specified )
)
Half Sine Wave : T
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
T
T
A
A
=25°C, Pulse Width ≤ 1.0㎲
=25°C, t = 8.3ms
Condition
C
= 45 °C
Symbol
TO-92
3. Anode
- 40 ~ 125
- 40 ~ 150
SCN2C60
Ratings
600
1.0
1.5
0.9
0.1
5.0
15
2
1
2. Gate
1. Cathode
Units
A
°C
°C
W
W
V
A
A
A
A
V
2
s
1/5

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scn2c60 Summary of contents

Page 1

... 25°C unless otherwise specified ) J Condition Half Sine Wave : T C All Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms T =25°C, Pulse Width ≤ 1.0㎲ =25° 8.3ms A SCN2C60 Symbol 2. Gate ○ ○ ○ 3. Anode 1. Cathode TO-92 Ratings Units 600 = 45 °C 1.0 1 ...

Page 2

... SCN2C60 Electrical Characteristics Symbol Items Repetitive Peak Off-State I DRM Current V Peak On-State Voltage ( Gate Trigger Current ( Gate Trigger Voltage ( Non-Trigger Gate Voltage (1) GD Critical Rate of Rise Off-State dv/dt Voltage Critical Rate of Rise On-State di/dt Current I Holding Current H R Thermal Impedance ...

Page 3

... 0 Fig 4. Thermal Response 1 0.1 0.01 1.6 2.0 0.1 Fig 6. Typical Gate Trigger Current vs. 2.0 1.6 1.2 0.8 0.4 0.0 -50 100 150 C] SCN2C60 o θ = 180 π π 2 θ 360° θ : Conduction Angle 0.2 0.4 0.6 0.8 1.0 1.2 Average On-State Current [ 100 1000 Time (sec) Junction Temperature 0 50 100 o Junction Temperature [ C] 1 ...

Page 4

... SCN2C60 Fig 7. Typical Holding Current -40 - Junction Temperature [ ] 4/5 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 100 120 0.0 ℃ Fig 8. Power Dissipation θ = 120 o θ θ θ 0.2 0.4 0.6 0.8 Average On-State Current [A] o θ = 180 o 1.0 1.2 ...

Page 5

... TO-92 Package Dimension Dim. Min 4.43 D 14 Typ. Max. Min. 4.2 3.7 4.83 0.174 14.87 0.554 0.4 4.83 0.174 0.45 2.54 2.54 0.48 0.013 SCN2C60 Inch Typ. Max. 0.165 0.146 0.190 0.585 0.016 0.190 0.017 0.100 0.100 0.019 1. Cathode 2. Gate 3. Anode 5/5 ...

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