tsdf03030xr Vishay, tsdf03030xr Datasheet - Page 2

• Manufacturer Part Number: tsdf03030xr
• Manufacturer: Vishay

Absolute Maximum Ratings
T
Maximum Thermal Resistance
T
Electrical DC Characteristics
T
TSDF03030X/TSDF03030XR
Vishay Semiconductors
2 (4)
Drain - source voltage
Drain current
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
Storage temperature range
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
Drain - source
breakdown voltage
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
Drain - source
operating current
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
www.vishay.com
All of following data and characteristics are valid for operating either
amplifier 1 (pin 1, 3, 2, 5) or amplifier 2 (pin 6, 4, 2, 5)
amb
amb
amb
Parameter
Parameter
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
= 25 C, unless otherwise specified
Parameter
plated with 35 m Cu
I
+I
+V
V
V
V
D
DS
DS
DS
I
V
G1S
G2S
= 10 A, V
G1S
G2S
= V
= 5 V, V
= V
= 10 mA, V
= 10 mA, V
= 5 V, V
= 5 V, V
RG1
RG1
= 5 V, V
= 5 V, R
G2S
G1S
Test Conditions
G2S
G1S
Test Conditions
= 4, I
G2S
= V
G2S
T
= V
amb
= V
G2S
G1
G2S
= V
D
= V
DS
Test Conditions
DS
= 56 k , I
= 20 A
= 4 V, R
= 0
DS
DS
= 0
60 C
= 0
= 0
= 0
G1
D
= 20 A
= 56 k
3
+V
+V
V
V
V
V
Symbol
G1
+I
G1S(OFF)
G2S(OFF)
Symbol
-V
(BR)DSS
I
(BR)G1SS
(BR)G2SS
I
G1/G2SM
I
DSO
V
G1SS
/ V
T
T
P
G2SS
G1SM
I
stg
DS
Ch
D
tot
Symbol
R
G2SM
thChA
Min.
0.5
0.8
12
7
7
8
–55 to +150
Value
Document Number 85089
200
150
1.5
Typ.
30
10
Value
1.0
8
6
14
450
Rev. 1, 12–Nov–01
Max.
1.3
1.4
10
10
20
20
20
Unit
mW
mA
mA
K/W
Unit
V
V
V
C
C
Unit
mA
nA
nA
V
V
V
V