pdm41028 ETC-unknow, pdm41028 Datasheet - Page 7

• Manufacturer Part Number: pdm41028
• Description: 1 Megabit Static Ram 256k X 4-bit
• Manufacturer: ETC-unknow

Low V
Data Retention Electrical Characteristics (LA Version Only)
NOTES: (For three previous Electrical Characteristics tables)
Rev. 2.2 - 4/29/98
Symbol Parameter
I
CCDR
t
V
t
CDR
R
DR
(3)
CC
1. The parameter is tested with CL = 5 pF as shown in Figure 2. Transition is measured 200 mV from steady state voltage.
2. At any given temperature and voltage condition, t
3. This parameter is sampled.
4. WE is high for a READ cycle.
5. The device is continuously selected. Chip Enable is held in its active state.
6. The address is valid prior to or coincident with the latest occuring Chip Enable.
7. Vcc = 5V
VCC for Retention Data
Data Retention Current
Chip Deselect to Data Retention Time
Operation Recovery Time
Data Retention Waveform
CE
V CC
AC Electrical Characteristics
SHADED AREA = PRELIMINARY DATA
Notes referenced are after Data Retention Table
Description
WRITE Cycle
WRITE Cycle time
Chip enable active time
Address Valid to end of write
Address setup time
Address hold from end of write
Write pulse width
Write pulse width
Data setup time
Data hold time
Write disable to output in low Z
Write enable to output in high Z
V
V
IH
IL
5%.
t
CDR
(1,3)
(1,3)
4.5V
t
t
Sym
t
t
LZWE
HZWE
t
t
t
t
WP1
WP2
t
t
t
WC
CW
AW
AH
DS
DH
AS
CE
V
or
HZCE
Data Retention Mode
IN
0.2V
Min. Max. Min. Max. Min. Max. Units
V
V
is less than t
10
10
10
10
V
V DR
CC
0
0
9
7
0
0
CC
DR
-10
Test Conditions
– 0.2V
– 0.2V
(7)
7
LZCE
12
10
10
10
11
0
0
7
0
0
-12
4.5V
.
V
V
(7)
CC
CC
7
= 2V
= 3V
15
11
11
11
12
0
0
7
0
0
t
R
-15
Min.
DON'T CARE
t
—
—
RC
7
2
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Typ.
—
—
—
—
—
PDM41028
Max.
500
750
—
—
—
Unit
ns
ns
V
A
A
7
10
11
12
1
2
3
4
5
6
7
8
9