sqm120n04-03l Vishay, sqm120n04-03l Datasheet

no-image

sqm120n04-03l

Manufacturer Part Number
sqm120n04-03l
Description
Automotive N-channel 40 V D-s 175 °c Mosfet
Manufacturer
Vishay
Datasheet
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2036-Rev. B, 17-Oct-11
PRODUCT SUMMARY
V
R
R
I
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
D
DS
DS(on)
DS(on)
(A)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V)
() at V
() at V
GS
GS
G
Top View
TO-263
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
www.vishay.com
= 10 V
= 4.5 V
D
b
S
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
b
G
N-Channel MOSFET
a
0.0035
0.0053
Single
C
120
40
= 25 °C, unless otherwise noted)
D
S
PCB Mount
T
T
T
L = 0.1 mH
T
C
C
C
C
= 125 °C
= 125 °C
= 25 °C
= 25 °C
a
c
1
TO-263
SQM120N04-03L-GE3
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Package with Low Thermal Resistance
• AEC-Q101 Qualified
• 100 % R
• Compliant to RoHS Directive 2002/95/EC
Definition
SYMBOL
SYMBOL
T
R
R
J
V
V
E
I
I
P
, T
DM
thJA
thJC
I
I
AS
DS
GS
D
S
AS
D
stg
g
www.vishay.com/doc?91000
and UIS Tested
®
Power MOSFET
- 55 to + 175
d
LIMIT
LIMIT
± 20
0.65
120
105
120
480
145
230
40
54
76
40
SQM120N04-03L
Vishay Siliconix
Document Number: 67061
UNIT
UNIT
°C/W
mJ
°C
W
V
A

Related parts for sqm120n04-03l

sqm120n04-03l Summary of contents

Page 1

... 0 ° 125 ° stg SYMBOL c PCB Mount R thJA R thJC 1 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix Power MOSFET d LIMIT UNIT 40 V ± 20 120 105 120 A 480 54 145 mJ 230 175 °C LIMIT UNIT 40 °C/W 0.65 Document Number: 67061 ...

Page 2

... MHz g t d(on 0.18   110 GEN d(off 100 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix MIN. TYP. MAX. UNIT 1.5 2.0 2 ± 100 125 ° μ 175 ° 250 J 120 - - - 0.0027 0.0035 = 125 ° ...

Page 3

... 0.015 0.012 0.009 0.006 0.003 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix ° 125 ° ° Gate-to-Source Voltage (V) GS Transfer Characteristics ...

Page 4

... 100 125 T - Junction Temperature (°C) J Drain Source Breakdown vs. Junction Temperature 4 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix T = 150 ° °C J 0.2 0.4 0.6 0.8 1.0 1 Source-to-Drain Voltage (V) SD Source Drain Diode Forward Voltage 250 μ ...

Page 5

... BVDSS Limited 0.01 0.01 0 Drain-to-Source Voltage ( minimum V at which R is specified GS GS DS(on) Safe Operating Area - Square Wave Pulse Duration (s) 5 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix 100 µ 100 ms 100 10 100 1000 Document Number: 67061 ...

Page 6

... S11-2036-Rev. B, 17-Oct-11 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 6 www.vishay.com/doc?91000 SQM120N04-03L Vishay Siliconix - Document Number: 67061 ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

Related keywords