si4308dy Vishay, si4308dy Datasheet - Page 6

• Manufacturer Part Number: si4308dy
• Description: Dual N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

Si4308DY
Vishay Siliconix
www.vishay.com
6
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0001
0.001
0.01
100
0.1
50
10
10
6
5
4
3
2
1
0
1
1
0.0
0
0
Reverse Current vs. Junction Temperature
V
I
D
DS
Source-Drain Diode Forward Voltage
= 13 A
0.2
25
= 15 V
10
V
V
SD
Q
DS
T
g
J
- Source-to-Drain Voltage (V)
= 30 V
= 150_C
0.4
50
- Total Gate Charge (nC)
T
J
Gate Charge
- temperature (_C)
20
0.6
75
30
100
0.8
T
V
J
DS
= 25_C
= 24 V
40
125
1.0
150
1.2
50
New Product
0.030
0.025
0.020
0.015
0.010
0.005
0.000
200
160
120
1.6
1.4
1.2
1.0
0.8
0.6
80
40
0.001
0
-50
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
-25
D
GS
= 13 A
= 10 V
2
0.01
T
V
0
J
GS
Single Pulse Power
- Junction Temperature (_C)
- Gate-to-Source Voltage (V)
25
Time (sec)
4
50
0.1
S-21646—Rev. B, 23-Sep-02
I
D
6
Document Number: 71941
75
= 13 A
CHANNEL−2
100
1
8
125
150
10
10