emh2801 Sanyo Semiconductor Corporation, emh2801 Datasheet
emh2801
Manufacturer Part Number
emh2801
Description
Mosfet P-channel Silicon Mosfet Sbd Schottky Barrier Diode
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
1.EMH2801.pdf
(5 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
emh2801-TL-H
Manufacturer:
ON Semiconductor
Quantity:
2 200
Ordering number : ENA1821
EMH2801
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7045-007
[MOSFET]
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
•
•
•
•
1
Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package
facilitating high-density mounting
[MOSFET]
•
[SBD]
•
Halogen free compliance
8
0.5
Low ON-resistance
Small switching noise
0.2
2.0
Parameter
4
5
1 : Anode
2 : No Contact
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Cathode
8 : Cathode
SANYO : EMH8
0.125
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MOSFET : P-Channel Silicon MOSFET
SBD : Schottky Barrier Diode
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
EMH2801
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
•
•
1.8V drive
Low forward voltage (I F =2.0A, V F max=0.46V)
Conditions
1
8
TL
7
2
2
×0.8mm) 1unit
6
3
81110PE TK IM TC-00002458
DATA SHEET
5
4
: EMH8
: -
Marking
QA
LOT No.
Ratings
--55 to +125
Continued on next page.
--20
±10
--20
150
1.0
--3
No. A1821-1/5
Unit
°C
°C
W
A
A
V
V
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