cph3340 Sanyo Semiconductor Corporation, cph3340 Datasheet

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cph3340

Manufacturer Part Number
cph3340
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

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CPH3340
Manufacturer:
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Ordering number : ENA0090A
CPH3340
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : YP
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
V (BR)DSS
R DS (on)1
R DS (on)2
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V GS (off)
Symbol
Symbol
V GSS
V DSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
SANYO Semiconductors
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
I D =--1mA, V GS =0V
V DS =- -20V, V GS =0V
V GS = 8V, V DS =0V
V DS =- -10V, I D =--1mA
V DS =- -10V, I D =- -2.5A
I D =--2.5A, V GS =- -4V
I D =--1A, V GS =- -2.5V
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
V DS =- -10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
CPH3340
Conditions
Conditions
O1806 MS IM / 92005PE MS IM TB-00001606
2
0.8mm)
DATA SHEET
min
--0.4
--20
5.2
Ratings
typ
1875
Ratings
289
276
178
130
8.6
32
44
21
93
Continued on next page.
--55 to +150
max
150
--1.4
--20
--20
1.2
10
--5
10
45
62
No. A0090-1/4
--1
Unit
Unit
m
m
pF
pF
pF
ns
ns
ns
ns
W
V
V
A
A
V
V
S
C
C
A
A

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cph3340 Summary of contents

Page 1

... SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN CPH3340 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device ...

Page 2

... Switching Time Test Circuit --1.5V --0.6 --0.7 --0.8 --0.9 --1.0 IT10137 Ta=25 C --6 --8 IT10138 Ratings min typ max 16 3.8 3.2 --0.83 --1 --10V 0V -- --2. PW= CPH3340 P --7 --6 --5 --4 --3 --2 -- --0.5 --1.0 --1.5 Gate-to-Source Voltage (on --60 --40 --20 ...

Page 3

... --4 --10V --5A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 --0 Total Gate Charge 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature CPH3340 -- --1 --0 --0. --10 --0.2 IT10140 --10V 1000 100 ...

Page 4

... Note on usage : Since the CPH3340 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment ...

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