cph6351 Sanyo Semiconductor Corporation, cph6351 Datasheet

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cph6351

Manufacturer Part Number
cph6351
Description
P-channel Silicon Mosfet
Manufacturer
Sanyo Semiconductor Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cph6351-TL-E
Manufacturer:
SANYO/三洋
Quantity:
20 000
Ordering number : ENN6936
Preliminary
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : JE
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
V (BR)DSS
R DS (on)1
R DS (on)2
V GS (off)
Symbol
Symbol
V DSS
V GSS
I DSS
I GSS
Tstg
I DP
Tch
P D
yfs
I D
Ultrahigh-Speed Switching Applications
I D =- -1mA, V GS =0
V DS =--20V, V GS =0
V GS = 8V, V DS =0
V DS =--10V, I D =--1mA
V DS =--10V, I D =- -1.5A
I D =- -1.5A, V GS =--4V
I D =- -0.5A, V GS =--2.5V
PW 10 s, duty cycle 1%
Mounted on a ceramic board (900mm
CPH6351
Conditions
Package Dimensions
unit : mm
2151A
Conditions
1
6
2
2.9
5
0.95
2
3
0.8mm)
4
0.4
[CPH6351]
min
P-Channel Silicon MOSFET
--0.4
--20
3.3
42501 TS IM TA-2650
0.15
Ratings
typ
Ratings
140
4.8
90
CPH6351
Continued on next page.
--55 to +150
0.05
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
max
--1.4
--10
120
200
150
--20
--12
10
1.6
10
--3
No.6936-1/4
Unit
Unit
m
m
W
V
V
A
A
V
V
S
C
C
A
A

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cph6351 Summary of contents

Page 1

... Tch Tstg Conditions -1mA =--20V 8V =--10V =--1mA yfs V DS =--10V -1. -1.5A =-- -0.5A =--2.5V P-Channel Silicon MOSFET CPH6351 [CPH6351] 0. Drain 2 : Drain Gate 4 : Source 5 : Drain 6 : Drain 0.4 SANYO : CPH6 Ratings Unit ...

Page 2

... Gate-to-Source Voltage CPH6351 Conditions Ciss -10V, f=1MHz -10V, f=1MHz Crss -10V, f=1MHz See specified Test Circuit t r See specified Test Circuit See specified Test Circuit t f See specified Test Circuit ...

Page 3

... --3A --8 --6 --4 -- Total Gate Charge 2.0 1.6 1.5 1.0 0 100 120 Ambient Temperature °C CPH6351 -- --1 --0 --0. --0.001 --10 0 --0.2 Diode Forward Voltage IT03112 Ciss, Coss, Crss -- V DS ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2001. Specifications and information herein are subject to change without notice. CPH6351 PS No.6936-4/4 ...

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