APTGF25H120T3G_09 MICROSEMI [Microsemi Corporation], APTGF25H120T3G_09 Datasheet

APTGF25H120T3G_09

Manufacturer Part Number

APTGF25H120T3G_09

Description

Full - Bridge NPT IGBT Power Module

Manufacturer

MICROSEMI [Microsemi Corporation]

Datasheet

1.APTGF25H120T3G_09.pdf (6 pages)

Current page: 1 of 6
Download datasheet (244Kb)

Absolute maximum ratings

RBSOA

Symbol

NPT IGBT Power Module

All multiple inputs and outputs must be shorted together

CES

Collector - Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

Reverse Bias Safe Operating Area

28 27 26

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Example: 13/14 ; 29/30 ; 22/23 …

Full - Bridge

CR2

CR1

Parameter

13 14

23 22

CR4

CR3

11 12

www.microsemi.com

= 125°C

= 25°C

= 80°C

= 25°C

Application

Features

Benefits

•

50A@1150V

Max ratings

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Non Punch Through (NPT) Fast IGBT

Kelvin emitter for easy drive

Very low stray inductance

High level of integration

Internal thermistor for temperature monitoring

Outstanding performance at high frequency

operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting

Low profile

Easy paralleling due to positive T

Each leg can be easily paralleled to achieve a

phase leg of twice the current capability

RoHS compliant

1200

APTGF25H120T3G

100

±20

208

CES

Low voltage drop

Low tail current

Switching frequency up to 50 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

Avalanche energy rated

RBSOA and SCSOA rated

Symmetrical design

= 25A @ Tc = 80°C

= 1200V

Unit

of V

CEsat

1 - 6

Related parts for APTGF25H120T3G_09

APTGF25H120T3G_09 Summary of contents

Page 1

Full - Bridge NPT IGBT Power Module CR1 CR3 CR2 CR4 ...

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ ⎡ exp ⎢ B ⎣ Thermal and package characteristics Symbol Characteristic ...

Page 4

Typical Performance Curve Output characteristics (V 80 250µs Pulse Test < 0.5% Duty cycle Collector to Emitter Voltage (V) CE Transfer Characteristics 120 ...

Page 5

Turn-On Delay Time vs Collector Current 600V 22Ω 15V Collector to Emitter Current (A) CE Current Rise Time ...

Page 6

Capacitance vs Collector to Emitter Voltage 10000 1000 100 Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 ...

Related keywords

APTGF25H120T3G_09 datasheet
APTGF25H120T3G_09 data sheet
APTGF25H120T3G_09 pdf datasheet
APTGF25H120T3G_09 component
APTGF25H120T3G_09 part
APTGF25H120T3G_09 distributor
APTGF25H120T3G_09 RoHS
APTGF25H120T3G_09 datasheet download

APTGF25H120T3G_09 MICROSEMI [Microsemi Corporation], APTGF25H120T3G_09 Datasheet

APTGF25H120T3G_09

Related parts for APTGF25H120T3G_09

APTGF25H120T3G_09 Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Related keywords