APTGF25H120T3G_09 MICROSEMI [Microsemi Corporation], APTGF25H120T3G_09 Datasheet
APTGF25H120T3G_09
Related parts for APTGF25H120T3G_09
APTGF25H120T3G_09 Summary of contents
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Full - Bridge NPT IGBT Power Module CR1 CR3 CR2 CR4 ...
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All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...
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Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic R Resistance @ 25° 298.15 K 25/ ⎡ exp ⎢ B ⎣ Thermal and package characteristics Symbol Characteristic ...
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Typical Performance Curve Output characteristics (V 80 250µs Pulse Test < 0.5% Duty cycle Collector to Emitter Voltage (V) CE Transfer Characteristics 120 ...
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Turn-On Delay Time vs Collector Current 600V 22Ω 15V Collector to Emitter Current (A) CE Current Rise Time ...
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Capacitance vs Collector to Emitter Voltage 10000 1000 100 Collector to Emitter Voltage (V) CE Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 0.3 ...