APTGF300DU120G_07 MICROSEMI [Microsemi Corporation], APTGF300DU120G_07 Datasheet

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APTGF300DU120G_07

Manufacturer Part Number
APTGF300DU120G_07
Description
Dual Common Source NPT IGBT Power Module
Manufacturer
MICROSEMI [Microsemi Corporation]
Datasheet
Absolute maximum ratings
RBSOA
Symbol
G1
E1
V
V
NPT IGBT Power Module
I
P
I
CM
CES
C
GE
D
G1
E1
E2
G2
Dual Common Source
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
C1
Q1
C1
Parameter
E
C2
E
Q2
C2
www.microsemi.com
G2
E2
T
T
T
T
T
c
c
c
c
j
= 150°C
= 25°C
= 80°C
= 25°C
= 25°C
Benefits
Application
Features
600A @ 1200V
Max ratings
AC Switches
Switched Mode Power Supplies
Uninterruptible Power Supplies
Non Punch Through (NPT) FAST IGBT
Kelvin emitter for easy drive
Very low stray inductance
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
Low profile
RoHS Compliant
1200
1780
APTGF300DU120G
-
-
-
-
-
-
-
-
-
-
400
300
600
±20
V
I
C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
Symmetrical design
M5 power connectors
CES
= 300A @ Tc = 80°C
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGF300DU120G_07 Summary of contents

Page 1

Dual Common Source NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T ...

Page 4

Typical Performance Curve Output Characteristics (V 600 500 T =25°C J 400 300 200 100 (V) CE Transfert Characteristics 600 500 400 300 T =125°C J 200 100 ...

Page 5

Operating Frequency vs Collector Current 100 80 ZVS 60 40 hard ZCS switching 100 150 200 250 300 350 I (A) C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.12 0.9 ...

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