APTGF300DU120G_07 MICROSEMI [Microsemi Corporation], APTGF300DU120G_07 Datasheet
APTGF300DU120G_07
Related parts for APTGF300DU120G_07
APTGF300DU120G_07 Summary of contents
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Dual Common Source NPT IGBT Power Module Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage CES I Continuous Collector Current C I Pulsed Collector Current ...
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All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...
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Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T ...
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Typical Performance Curve Output Characteristics (V 600 500 T =25°C J 400 300 200 100 (V) CE Transfert Characteristics 600 500 400 300 T =125°C J 200 100 ...
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Operating Frequency vs Collector Current 100 80 ZVS 60 40 hard ZCS switching 100 150 200 250 300 350 I (A) C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.14 0.12 0.9 ...