APTGF75H120TG_10 MICROSEMI [Microsemi Corporation], APTGF75H120TG_10 Datasheet

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APTGF75H120TG_10

Manufacturer Part Number
APTGF75H120TG_10
Description
Full - Bridge NPT IGBT Power Module
Manufacturer
MICROSEMI [Microsemi Corporation]
Datasheet
1.APTGF75H120TG_10.pdf (5 pages)
Absolute maximum ratings
RBSOA
Symbol
V
V
NPT IGBT Power Module
E2
I
G1
E1
G2
P
I
CM
CES
GE
C
D
NTC1
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
G3
E3
VBUS
E1
G1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
Q2
Full - Bridge
0/VBU S
OUT1
0/VBUS
Parameter
G4
G2
E4
E2
OUT2
VBUS
Q4
Q3
OUT2
OUT1
NTC2
NTC1
www.microsemi.com
NTC2
T
T
T
T
T
G3
G4
E4
E3
c
c
c
c
j
= 25°C
= 80°C
= 25°C
= 25°C
= 150°C
Application
Features
Benefits
150A @ 1200V
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Max ratings
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Non Punch Through (NPT) Fast IGBT
Kelvin emitter for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency
operation
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Easy paralleling due to positive T
Low profile
RoHS compliant
1200
±20
100
150
500
75
V
I
APTGF75H120TG
-
-
-
-
-
-
-
-
-
C
CES
= 75A @ Tc = 80°C
Low voltage drop
Low tail current
Switching frequency up to 50 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
RBSOA and SCSOA rated
Symmetrical design
Lead frames for power connections
= 1200V
Unit
W
V
A
V
C
of V
CEsat
1 - 5

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APTGF75H120TG_10 Summary of contents

Page 1

Full - Bridge NPT IGBT Power Module VBUS Q1 G1 OUT1 E1 OUT2 NTC1 0/VBU VBUS 0/VBUS Absolute maximum ratings Symbol Parameter V Collector - Emitter Breakdown Voltage ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Collector Current CES V Collector Emitter saturation Voltage CE(sat) V Gate Threshold Voltage GE(th) I Gate – Emitter Leakage Current GES Dynamic Characteristics Symbol Characteristic C Input Capacitance ...

Page 3

Temperature sensor NTC Symbol Characteristic R Resistance @ 25°C 25 ∆ 298.15 K 25/85 25 ∆B exp Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC V ...

Page 4

Typical Performance Curve Output Characteristics (V 150 125 100 Transfert Characteristics 150 125 100 Switching Energy Losses vs Gate Resistance 600V CE 30 ...

Page 5

Operating Frequency vs Collector Current 100 ZCS hard 20 switching maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 0.6 0.9 0.5 0.7 0.4 0.5 ...

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