MBR2150VG-E1 BCDSEMI [BCD Semiconductor Manufacturing Limited], MBR2150VG-E1 Datasheet - Page 4

• Manufacturer Part Number: MBR2150VG-E1
• Description: HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
• Manufacturer: BCDSEMI [BCD Semiconductor Manufacturing Limited]

Electrical Characteristics
Note 3: Pulse Test: Pulse Width=300μs, Duty Cycle≤ 2 .0%.
Typical Performance Characteristics
Jul. 2011 Rev. 1. 1
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Parameter
Maximum Instantaneous Forward
Voltage Drop (Note 3)
Maximum Instantaneous Reverse
Current (Note 3)
0.01
0.1
10
1
0.0
Figure 4. Typical Forward Characteristics
0.2
V
F
, Instantaneous Forward Voltage (V)
0.4
0.6
0.8
V
1.0
I
Symbol
R
F
(MAX)
(MAX)
T
T
T
J
J
J
=25
=125
=150
1.2
o
C
o
o
C
C
1.4
I
I
Rated
T
Rated
T
F
F
C
C
=2A, T
=2A, T
4
=25°C
=125°C
Conditions
C
C
=125°C
=25°C
DC
DC
10
10
10
10
10
10
10
-1
-2
-3
3
2
1
0
0
Figure 5. Typical Reverse Characteristics
T
BCD Semiconductor Manufacturing Limited
J
Voltage,
Voltage,
=150
20
V
o
C
R
, Instantaneous Reverse Voltage (V)
40
T
J
=125
60
o
C
Value
80
0.85
0.67
0.1
2.0
100
Data Sheet
MBR2150
T
J
=25
120
o
C
Unit
140
mA
V
160