MSC81038 ASI [Advanced Semiconductor], MSC81038 Datasheet
MSC81038
Manufacturer Part Number
MSC81038
Description
NPN SILICON RF POWER TRANSISTOR
Manufacturer
ASI [Advanced Semiconductor]
Datasheet
1.MSC81038.pdf
(1 pages)
DESCRIPTION:
The
General Purpose Class C Power
Amplifier Applications up to 1.2 GHz.
FEATURES:
MAXIMUM RATINGS
CHARACTERISTICS
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200
P
T
Omnigold™ Metalization System
Emitter Ballasted
V
SYMBOL
P
Hermetic Microstrip Package
T
DISS
I
STG
CC
JC
C
G
BV
BV
BV
J
ASI MSC81058
I
h
C
= 10 dB min. at 10 W/ 1.0 GHz
CBO
P
FE
CBO
ob
CER
EBO
G
C
NPN SILICON RF POWER TRANSISTOR
29 W @ T
-65 °C to +200 °C
-65 °C to +200 °C
I
I
I
V
V
V
V
C
C
E
CB
CE
CB
CC
= 1.0 mA
= 10 mA
= 1.0 mA
8.5 °C/W
= 28 V
= 5.0 V
= 28 V
= 28 V
1.0 A
35 V
is Designed for
C
NONETEST CONDITIONS
= 25 °C
T
C
= 25 °C
I
R
C
P
BE
= 500 mA
OUT
= 10
= 10 W
Specifications are subject to change without notice.
f = 1.0 MHz
f = 1.0 GHz
PACKAGE STYLE .250 2L FLG
MINIMUM TYPICAL MAXIMUM
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
P
FAX (818) 765-3004
3.5
45
45
15
10
60
B
.740 / 18.80
.560 / 14.22
.790 / 20.07
C
.028 / 0.71
.245 / 6.22
.128 / 3.25
.110 / 2.79
.225 / 5.72
.165 / 4.19
.003 / 0.08
.058 / 1.47
.119 / 3.02
.149 / 3.78
MINIMUM
inches / mm
L
E
G
ØD
H
.125 / 3.18
.117 / 2.97
11
64
J
K
F
I
A
.570 / 14.48
.810 / 20.57
MAXIMUM
.032 / 0.81
.255 / 6.48
.132 / 3.35
.117 / 2.97
.235 / 5.97
.185 / 4.70
.007 / 0.18
.068 / 1.73
.135 / 3.43
.187 / 4.75
inches / mm
MSC81058
M
CHAMFER
.060 x 45°
120
N
2.5
10
P
UNITS
mA
REV. A
dB
pF
---
%
V
V
V
1/1
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