IRKT26/06AS90 IRF [International Rectifier], IRKT26/06AS90 Datasheet - Page 2

• Manufacturer Part Number: IRKT26/06AS90
• Description: THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR
• Manufacturer: IRF [International Rectifier]

IRK.26 Series
Bulletin I27130 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
2
On-state Conduction
I
I
I
I
or
I
I
I
V
r
V
V
di/dt
I
I
(1) I
(4) I >
T(AV)
F(AV)
O(RMS
TSM
FSM
2
2
H
L
t
t
T(TO)
TM
FM
t
IRK.26
Type number
2
t for time t
)
Parameters
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
Max. continuous RMS
on-state current.
As AC switch
Max. peak, one cycle
non-repetitive on-state
or forward current
Max. I
Max. I
Max. value of threshold
voltage (2)
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
Max. holding current
Max. latching current
x I
AV
2
2
t for fusing
x
t for fusing (1)
=
I
2
t x t
x
Voltage
Code
04
06
08
10
12
14
16
-
(2) Average power
peak reverse voltage peak reverse voltage
V
RRM
repetitive
IRK.26
, maximum
12.11
11.82
1000
1200
1400
1600
1100
1000
8000
1.95
0.92
0.95
400
600
800
400
420
335
350
470
490
800
730
560
510
150
200
400
60
27
27
V
=
V
T(TO)
x I
T(AV)
V
+
A/µs
RSM
non-repetitive
Units
A
r
A
m
mA
t
2
2
V
V
x (I
A
s
s
, maximum
1100
1300
1500
1700
500
700
900
T(RMS)
V
180
T
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t=10ms
t=8.3ms
t= 0.1 to 10ms, no voltage reappl. T
Low level (3)
High level (4)
Low level (3)
High level (4)
I
I
T
I
t
T
resistive load, gate open circuit
T
Conditions
TM
FM
TM
r
)
C
J
J
J
< 0.5 µs, t
2
= 25
= 25
= 25
= 85
= x I
= x I
= x I
o
conduction, half sine wave,
o
o
o
o
C, anode supply = 6V, resistive load
C, anode supply = 6V,
C
C, from 0.67 V
T(AV)
F(AV)
T(AV)
(3) 16.7% x
peak off-state voltage,
V
No voltage
100% V
No voltage
100% V
reapplied
reapplied
T
no voltage reapplied
reapplied
reapplied
T
no voltage reapplied
p
DRM
J
J
> 6 µs
gate open circuit
= 25
= 25
,
I
(RMS)
I
g
, max. repetitive
o
o
= 500mA,
C,
C,
RRM
RRM
1000
1200
1400
1600
400
600
800
or
V
DRM
x I
Initial T
T
T
T
AV
,
J
J
Initial T
J
= 25
= T
= T
< I <
half wave,
Sinusoidal
J
J
J
o
www.irf.com
J
=T
max
C
max
= T
J
= T
J
x I
max
J
max.
AV
J
125°C
max.
I
I
mA
RRM
DRM
I
15
(RMS)