IRG4BC30K-S_04 IRF [International Rectifier], IRG4BC30K-S_04 Datasheet - Page 3

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IRG4BC30K-S_04

Manufacturer Part Number
IRG4BC30K-S_04
Description
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
Manufacturer
IRF [International Rectifier]
Datasheet
www.irf.com
100
0.1
10
6.0
5.0
4.0
3.0
2.0
1.0
0.0
1
0.1
1
Square wave:
V
CE
, Collector-to-Emitter Voltage (V)
60% of rated
Ideal diodes
T = 25 C
J
voltage
o
V
20µs PULSE WIDTH
GE
T = 150 C
J
= 15V
o
1
10
f, Frequency (kHz)
RMS
100
0.1
10
1
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 1.8W
J
sink
5
T = 150 C
= 90°C
J
V
GE
10
o
, Gate-to-Emitter Voltage (V)
T = 25 C
J
o
10
Triangular wave:
V
5µs PULSE WIDTH
CC
= 50V
Clamp voltage:
80% of rated
3
15
100
A

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