IRG4BC30S-S_04 IRF [International Rectifier], IRG4BC30S-S_04 Datasheet

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IRG4BC30S-S_04

Manufacturer Part Number
IRG4BC30S-S_04
Description
INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
Manufacturer
IRF [International Rectifier]
Datasheet
Absolute Maximum Ratings
Thermal Resistance
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Features
• Generation 4 IGBTs offer highest efficiency available
• IGBTs optimized for specified application conditions
www.irf.com
• Standard: optimized for minimum saturation
• Generation 4 IGBT design provides tight
• Lead-Free
V
I
I
I
I
V
E
P
P
T
T
R
R
R
Wt
C
C
CM
LM
J
STG
voltage and low operating frequencies (< 1kHz)
parameter distribution and high efficiency
CES
GE
ARV
D
D
θJC
θCS
θJA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 100°C
= 25°C
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Parameter
Parameter
IRG4BC30S-SPbF
G
n-channel
300 (0.063 in. (1.6mm) from case )
Typ.
0.50
1.44
–––
–––
C
E
-55 to +150
Max.
600
±20
100
Standard Speed IGBT
D
34
18
68
68
10
42
2
Pak
@V
V
CE(on) typ.
Max.
V
GE
–––
–––
1.2
40
CES
= 15V, I
PD - 95786
= 600V
= 1.4V
C
Units
Units
= 18A
g (oz)
°C/W
mJ
°C
W
V
A
V
8/30/04
1

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IRG4BC30S-S_04 Summary of contents

Page 1

... Storage Temperature Range STG Soldering Temperature, for 10 seconds Thermal Resistance Parameter R Junction-to-Case θJC R Case-to-Sink, Flat, Greased Surface θCS R Junction-to-Ambient, typical socket mount θJA Wt Weight www.irf.com IRG4BC30S-SPbF Standard Speed IGBT C V CES V CE(on) typ 15V n-channel 2 D Pak Max. ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS ∆V Temperature Coeff. of Breakdown Voltage /∆T (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th) ∆V /∆T Temperature Coeff. of ...

Page 3

Square wave: 60% of rated voltage Ideal diodes 0 0.1 Fig Typical Load Current vs. Frequency 100 150 ...

Page 4

T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 0.20 0.10 0.1 0.05 0.02 SINGLE PULSE 0.01 ...

Page 5

1MHz ies res oes ce gc 1500 C ies 1000 500 C oes C res 0 ...

Page 6

R = 23Ohm 150 C ° 480V 15V 12.0 GE 9.0 6.0 3.0 0 Collector-to-emitter Current (A) C Fig Typical Switching ...

Page 7

L 50V 1000V * Driver same type as D.U.T 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Fig. 13a - Clamped Inductive Load Test Circuit ...

Page 8

Dimensions are shown in millimeters (inches HIS 530S WIT H LOT CODE 8024 AS S EMBL 02, 2000 IN THE AS S EMBL Y L INE "L " Note: "P" ...

Page 9

Dimensions are shown in millimeters (inches) TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ ...

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