IRG4BC30WS IRF [International Rectifier], IRG4BC30WS Datasheet

IRG4BC30WS

Manufacturer Part Number

IRG4BC30WS

Description

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.10V, @Vge=15V, Ic=12A)

Manufacturer

IRF [International Rectifier]

Datasheet

1.IRG4BC30WS.pdf (8 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRG4BC30WS

Manufacturer:

Quantity:

12 500

Current page: 1 of 8
Download datasheet (191Kb)

INSULATED GATE BIPOLAR TRANSISTOR

Benefits

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

Features

• Lower switching losses allow more cost-effective

• Of particular benefit to single-ended converters and

• Low conduction losses and minimal minority-carrier

• Designed expressly for Switch-Mode Power

• Industry-benchmark switching losses improve

• 50% reduction of Eoff parameter

• Low IGBT conduction losses

• Latest-generation IGBT design and construction offers

When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering

operation than power MOSFETs up to 150 kHz

("hard switched" mode)

boost PFC topologies 150W and higher

recombination make these an excellent option for

resonant mode switching as well (up to >>300 kHz)

Supply and PFC (power factor correction)

applications

efficiency of all power supply topologies

tighter parameters distribution, exceptional reliability

STG

CES

ARV

techniques refer to application note #AN-994.

@ T

= 25°C

= 100°C

= 25°C

= 100°C

Junction-to-Case

Junction-to-Ambient, ( PCB Mounted,steady-state)*

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

Pulsed Collector Current

Clamped Inductive Load Current

Gate-to-Emitter Voltage

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Parameter

n-channel

300 (0.063 in. (1.6mm from case )

IRG4BC30W-S

Typ.

–––

-55 to + 150

D P a k

Max.

± 20

600

180

100

CE(on) typ.

Max.

1.2

CES

= 15V, I

= 600V

= 2.10V

Units

= 12A

Units

°C/W

°C

8/13/98

Related parts for IRG4BC30WS

IRG4BC30WS Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses ...

Page 2

Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES V Emitter-to-Collector Breakdown Voltage (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th Temperature Coeff. ...

Related keywords

IRG4BC30WS datasheet
IRG4BC30WS data sheet
IRG4BC30WS pdf datasheet
IRG4BC30WS component
IRG4BC30WS part
IRG4BC30WS distributor
IRG4BC30WS RoHS
IRG4BC30WS datasheet download

IRG4BC30WS IRF [International Rectifier], IRG4BC30WS Datasheet

IRG4BC30WS

Available stocks

Related parts for IRG4BC30WS

IRG4BC30WS Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Page 6

Page 7

Page 8

Related keywords