CSD1833D CDIL [Continental Device India Limited], CSD1833D Datasheet

CSD1833D

Manufacturer Part Number

CSD1833D

Description

NPN SILICON EPITAXIAL POWER TRANSISTOR

Manufacturer

CDIL [Continental Device India Limited]

Datasheet

1.CSD1833D.pdf (3 pages)

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An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

Continental Device India Limited

ABSOLUTE MAXIMUM RATINGS(Ta=25deg C)

DESCRIPTION

Collector -Base Voltage

Collector -Emitter Voltage

Emitter Base Voltage

Collector Current (DC)

Collector Power Dissipation Ta 25degC

Tc=25 deg C

Junction Temperature

Storage Temperature Range

*Single Pulse Pw=100ms

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

Collector Emitter Voltage

Collector Base Voltage

Emitter Base Voltage

Collector Cut off Current

Emitter Cut off Current

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

DC Current Gain

Dynamic Characteristics

Transition Frequency

Collector Output Capacitance

hFE CLASSIFICATION**

MARKING

**Pulse Test

NPN SILICON EPITAXIAL POWER TRANSISTOR

Low Freq. Power AMP.

Pulse*

Continental Device India Limited

SYMBOL

VCBO

VCEO

VEBO

Tstg

VCEO

VCBO

VEBO

ICBO

ICEO

IEBO

VCE(Sat)** IC=4A,IB=0,4A

VBE(Sat)**

hFE**

Cob

D : 60-120;

CSD

1833D

SYMBOL

Data Sheet

IC=50uA, IE=0

IE=50uA,IC=0

VCB=100V, IE=0

VCE=80, IB=0

VBE=4V,IC=0

IC=4A,IB=0,4A

IC=1A, VCE=5V

VCE=5V,IC=50mA,

f=5MHz

VCB=10V, IE=0

f=1MHz

TEST CONDITION

IC=1mA, IB=0

E : 100-200,

CSD

1833E

-55 to +150

VALUE

F: 160-320

CSD

1833F

MIN

100

150

100

MARKING : AS BELOW

TYP

150

MAX

320

1.5

Page 1 of 3

(9AW)

CSD1833

TO220

deg C

UNIT

MHz

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