TC2201 ETC1 [List of Unclassifed Manufacturers], TC2201 Datasheet

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TC2201

Manufacturer Part Number
TC2201
Description
Plastic Packaged Low Noise PHEMT GaAs FETs
Manufacturer
ETC1 [List of Unclassifed Manufacturers]
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC2201
Manufacturer:
RFMD
Quantity:
5 000
Part Number:
TC2201
Manufacturer:
FM/富满电子
Quantity:
20 000
* For the tight control of the pinch-off voltage range, we divide TC2201 into 3 model numbers to fit customer design requirement
FEATURES
DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
ABSOLUTE MAXIMUM RATINGS (T
TRANSCOM, INC., 90 Dasoong 7
Web-Site: www.transcominc.com.tw
(1)TC2201P0710 : Vp = -0.7V to -1.0V (2)TC2201P0811 : Vp = -0.8V to -1.1V (3)TC2201P0912 : Vp = -0.9V to -1.2V
If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for
details.
Symbol
BV
The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT
Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC
tested to assure consistent quality.
P
I
1.5 dB Typical Noise Figure at 12 GHz
High Associated Gain:
Ga = 7 dB Typical at 12 GHz
21.5 dBm Typical Power at 12 GHz
8 dB Typical Linear Power Gain at 12 GHz
Lg = 0.25 m, Wg = 300 m
100 % DC Tested
Low Cost Plastic Micro-X Package
Symbol
NF
R
G
V
G
g
DSS
1dB
m
DGO
T
th
V
a
L
P
T
V
I
I
P
P
STG
DS
GS
CH
GS
DS
in
T
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz
V
Linear Power Gain, f = 12GHz
V
Saturated Drain-Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
DS
DS
= 6 V, I
= 6 V, I
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Gate Current
RF Input Power, CW
Continuous Dissipation
Channel Temperature
Storage Temperature
DS
DS
Parameter
= 40 mA
= 40 mA
DS
= 4 V, I
DS
DS
DS
= 4 V, I
= 2 V, I
Plastic Packaged Low Noise PHEMT GaAs FETs
= 2 V, V
th
DS
Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C.
CONDITIONS
= 25 mA, f = 12GHz
DS
D
= 25 mA, f = 12GHz
GS
= 0.6mA
- 65
DGO
= 0 V
DS
= 2 V, V
= 0.15mA
400 mW
300 A
17 dBm
Rating
C
175
A
-3.0 V
7.0 V
I
to +175
=25 C)
A
DSS
Phone: 886-6-5050086
=25 C)
C
GS
= 0 V
C
P 1 / 4
PHOTO ENLARGEMENT
MIN
20.5
6
7
9
Fax: 886-6-5051602
-1.0*
TYP
21.5
100
1.5
90
12
80
7
8
REV.2_04/12/2004
TC2201
MAX
2
UNIT
dBm
Volts
Volts
mA
C/W
mS
dB
dB
dB

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TC2201 Summary of contents

Page 1

... Storage Temperature STG * For the tight control of the pinch-off voltage range, we divide TC2201 into 3 model numbers to fit customer design requirement (1)TC2201P0710 : Vp = -0.7V to -1.0V (2)TC2201P0811 : Vp = -0.8V to -1.1V (3)TC2201P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details ...

Page 2

... TC2201 TYPICAL SCATTERING PARAMETERS ( Mag Max 8 -180 S21 2 Per Div FREQUENCY (GHz) MAG 2 0.7533 3 0.6364 4 0.5532 5 0.5000 6 0.4738 7 0.4758 8 0.4993 9 0.5470 10 0.5944 11 0.6526 12 0.6960 13 0.7377 14 0.7730 15 0.8017 16 0.8164 17 0.8308 18 0.8402 th TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw = Swp Max ...

Page 3

... Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 TC2201 REV.2_04/12/2004 Mag Max Swp Max 0.25 18 GHz S12 0 -180 0.0625 Swp Min Per Div 2 GHz Swp Max 18GHz S22 ...

Page 4

... TC2201 OUTLINE DIMENSIONS (in mm) Source th TRANSCOM, INC., 90 Dasoong 7 Web-Site: www.transcominc.com.tw Gate Source 2E Drain Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Phone: 886-6-5050086 REV.2_04/12/2004 Fax: 886-6-5051602 ...

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