RB160A30_1 ROHM [Rohm], RB160A30_1 Datasheet

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RB160A30_1

Manufacturer Part Number
RB160A30_1
Description
Schottky barrier diode
Manufacturer
ROHM [Rohm]
Datasheet
Diodes
Schottky barrier diode
RB160A30
General rectification
1) Cylindrical mold type. (MSR)
2) High I surge capability.
3) Low I
4) High ESD.
Silicon epitaxial planar
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
Forward current surge peak (t=100µs)
Junction temperature
Storage temperature
(*1)Mounted on epoxy board. 180°Half sine wave
Forward voltagae
Reverse current
ESD break down voltage
Features
Construction
Electrical characteristics (Ta=25°C)
Applications
Absolute maximum ratings (Ta=25°C)
R
Parameter
.
Parameter
Symbol
ESD
V
I
R
F
Min.
0.33
20
Symbol
-
Tstg
V
I
V
FSM
Io
Tj
RM
R
Dimensions (Unit : mm)
Taping specifications (Unit : mm)
H1
H2
ROHM : MSR
Typ.
0.43
9.00
-
BLUE
Max.
0.48
L1
-55 to +150
50
29±1
-
Limits
150
A
30
30
70
1
Manufacture Date
Unit
µA
kV
F
V
E
L2
3.0±0.2
I
V
C=100pF,R=1.5kΩ, forward and reverse : 1 time
F
R
=1.0A
CATHODE BAND
=30V
Unit
V
V
A
A
C
D
B
BROWN
29±1
*H1(6mm):BROWN
Conditions
φ0.6±0.1
Symbol
|L1-L2|
H1
H2
B
C
D
E
Rev.B
T-31   52.4±1.5
T-32
T-31   5.0±0.5
T-31
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
T-31
T-32
Standard dimension
RB160A30
value(mm)
26.0
5.0±0.3
1.0 max.
1/2A±1.2
1/2A±0.4
±0.7
0.2 max.
6.0±0.5
5.0±0.5
1.5 max.
0.4 max.
φ2.5±0.2
0
+0.4
0
1/3

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RB160A30_1 Summary of contents

Page 1

Diodes Schottky barrier diode RB160A30 Applications General rectification Features 1) Cylindrical mold type. (MSR) 2) High I surge capability. 3) Low High ESD. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) ...

Page 2

Diodes Electrical characteristic curves (Ta=25°C) 1 Ta=75℃ Ta=125℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS 450 Ta=25℃ IF=1A 440 n=30pcs 430 420 AVE:424.2mV 410 400 VF DISPERSION MAP 150 Ifsm 8.3ms 100 ...

Page 3

Diodes 0.1 0.08 0.06 Sin(θ=180) 0.04 D=1 REVERSE VOLTAGE:VR(V) VR-P CHARACTERISTICS break at 30kV AVE:6.90kV 0 C=200pF C=100pF R=0Ω R=1.5kΩ ESD DISPERSION MAP 3 Io ...

Page 4

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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