BAS116-13-F DIODES [Diodes Incorporated], BAS116-13-F Datasheet - Page 2

• Manufacturer Part Number: BAS116-13-F
• Description: SURFACE MOUNT LOW LEAKAGE DIODE
• Manufacturer: DIODES [Diodes Incorporated]

Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 4)
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 4) @T
Thermal Resistance Junction to Ambient Air (Note 4) @T
Operating and Storage Temperature Range
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Leakage Current (Note 5)
Total Capacitance
Reverse Recovery Time
Notes:
BAS116
Document number: DS30233 Rev. 10 - 2
300
250
200
150
100
4. Part mounted on FR-4 PC board with recommended pad layout, which can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
50
0
0
25
T , AMBIENT TEMPERATURE (°C)
A
Fig. 1 Power Derating Curve
Characteristic
Characteristic
Characteristic
@T
50
A
A
= 25°C
= 25°C unless otherwise specified
75
@T
R
θJA
A
= 25°C unless otherwise specified
= 500°C/W
100
@ t = 1.0μs
@ t = 1.0ms
@ t = 1.0s
125
A
= 25°C
150
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Symbol
V
(BR)R
V
C
2 of 4
I
t
R
rr
F
T
T
Symbol
Symbol
V
V
J
V
R(RMS)
R
I
I
, T
I
FRM
RWM
V
FSM
P
RRM
FM
θ JA
Min
R
D
85
⎯
⎯
⎯
⎯
STG
250
300
200
150
100
50
0
0
Typ
⎯
⎯
⎯
⎯
2
T , AMBIENT TEMPERATURE ( C)
A
Fig. 2 Current Derating Curve
Max
0.90
1.25
50
1.0
1.1
5.0
3.0
80
⎯
⎯
-65 to +150
Value
Value
215
500
250
500
4.0
1.0
0.5
85
60
Unit
nA
nA
pF
μs
V
V
100
I
I
I
I
I
V
V
V
I
I
R
F
F
F
F
F
rr
R
R
R
= 1.0mA
= 10mA
= 50mA
= 150mA
= I
= 0.1 x I
= 100μA
= 75V
= 75V, T
= 0, f = 1.0MHz
R
Note 4
= 10mA,
Test Condition
150
R
°
, R
j
= 150°C
© Diodes Incorporated
°C/W
November 2011
L
BAS116
Unit
Unit
mW
mA
mA
°C
V
V
A
= 100Ω
200