BAS125-06 KEXIN [Guangdong Kexin Industrial Co.,Ltd], BAS125-06 Datasheet
BAS125-06
Manufacturer Part Number
BAS125-06
Description
Silicon Schottky Diodes
Manufacturer
KEXIN [Guangdong Kexin Industrial Co.,Ltd]
Datasheet
1.BAS125-06.pdf
(2 pages)
SMD Type
Reverse voltage
Forward current
Surge forward current
Total power dissipation
Junction temperature
Storage temperature range
Junction-ambient
Junction-soldering point
Note
1. For detailed information see chapter Package Outlines.
2.Package mounted on alumina 15 mm
3.450 mW per package.
Features
For low-loss, fast-recovery, meter
Integrated diffused guard ring
Low forward voltage
protection,bias isolation and clamping applications
Absolute Maximum Ratings Ta = 25
Parameter
Silicon Schottky Diodes
Symbol
R
R
I
16.7 mm
T
P
FRM
V
th JA
th JS
I
T
stg
F
tot
R
j
BAS125 series
Ts < 25
0.7 mm.
t
Conditions
Note 2
10 ms
(Note 3)
-55 to +150
Values
< 725
< 565
100
500
250
150
25
1
0.95
SOT-23
3
+0.1
-0.1
0.4
1.9
2.9
+0.1
-0.1
+0.1
-0.1
+0.1
-0.1
www.kexin.com.cn
2
K/W
K/W
Unit
mW
mA
mA
V
Diodes
1.Base
2.Emitter
3.collector
Unit: mm
0.1
+0.05
-0.01
1
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BAS125-06 Summary of contents
Page 1
... Surge forward current Total power dissipation Junction temperature Storage temperature range Junction-ambient Junction-soldering point Note 1. For detailed information see chapter Package Outlines. 2.Package mounted on alumina 15 mm 3.450 mW per package. Silicon Schottky Diodes BAS125 series Symbol Conditions FRM P Ts < ...
Page 2
... Silicon Schottky Diodes BAS125 series Symbol Conditions kHz 5mA kHz F F BAS125-05 BAS125- Diodes Min Typ Max Unit 385 410 mV 530 800 900 1 ...