MMBT945G-X-AE3-R UTC [Unisonic Technologies], MMBT945G-X-AE3-R Datasheet - Page 2

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MMBT945G-X-AE3-R

Manufacturer Part Number
MMBT945G-X-AE3-R
Description
AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR
Manufacturer
UTC [Unisonic Technologies]
Datasheet
MMBT945
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation(Ta=25°C)
Junction Temperature
Storage Temperature
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
ELECTRICAL CHARACTERISTICS
ABSOLUTE MAXIMUM RATINGS
CLASSIFICATION OF h
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
RANGE
RANK
PARAMETER
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PARAMETER
90-180
R
FE
SYMBOL
V
BV
BV
CE(SAT)
I
I
C
h
NF
CBO
EBO
f
FE
OB
CBO
CEO
T
SYMBOL
I
I
V
V
V
I
V
V
I
R
C
C
C
C
(T
CB
EB
CE
CE
CB
G
V
V
=100μA, I
=10mA, I
=100mA, I
=-0.1mA, V
V
T
(T
P
=10kΩ, f=100Hz
a
T
CBO
CEO
EBO
I
STG
I
=40V, I
=3V, I
=6V, I
=10V, I
=10V, I
=25°С, unless otherwise specified )
C
B
a
C
J
=25°С, unless otherwise specified)
135-270
TEST CONDITIONS
Q
C
C
=0
=1mA
B
E
C
E
E
=0
=0
=0, f=1MHz
=50mA
B
=0
=10mA
CE
=6V
NPN SILICON TRANSISTOR
200-400
-55 ~ +125
RATING
P
150
200
125
60
50
50
5
MIN
100
60
50
90
TYP
190
2.0
4.0
0.1
MAX
300-600
100
100
600
0.3
3.0
6.0
QW-R206-094.B
K
UNIT
mW
mA
mA
°С
°С
UNIT
MHz
V
V
V
nA
nA
pF
dB
V
V
V
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