RGP02-12E_11 VISHAY [Vishay Siliconix], RGP02-12E_11 Datasheet
RGP02-12E_11
Related parts for RGP02-12E_11
RGP02-12E_11 Summary of contents
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... For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT RGP02-12E thru RGP02-20E Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • ...
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... RGP02-12E thru RGP02-20E Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 0.1 A forward voltage Maximum °C A reverse current at rated DC blocking T = 125 °C voltage A Maximum reverse recovery time THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance Note (1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted ...
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... PACKAGE OUTLINE DIMENSIONS in inches (millimeters) Document Number: 88699 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT RGP02-12E thru RGP02-20E Vishay General Semiconductor 2.2 2 ...
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... Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’ ...