qm200hc-m Mitsumi Electronics, Corp., qm200hc-m Datasheet

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... OUTLINE DRAWING & CIRCUIT DIAGRAM 67.5 80 92.2 M4 LABEL MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE • I Collector current ........................ 200A C • V Collector-emitter voltage ........... 350V CEX • current gain............................. 100 FE • Non-Insulated Type 5 QM200HC-M NON-INSULATED TYPE Dimensions Feb.1999 ...

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... C I =200A =200V, I =200A, I =–I = Transistor part Diode part Conductive grease applied MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE Ratings 350 350 400 10 200 200 830 6 2000 –40~+150 –40~+125 — 0.98~1.47 10~15 kg·cm 0.98~1.47 10~15 kg· ...

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... =150A C T =25° =125° (A) B MITSUBISHI TRANSISTOR MODULES QM200HC-M HIGH POWER SWITCHING USE NON-INSULATED TYPE DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL =5. =2. =25° =125°C ...

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... VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL =25° =125° 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 COLLECTOR-EMITTER REVERSE VOLTAGE QM200HC-M NON-INSULATED TYPE I =–4A B2 400 (V) CE SECOND BREAKDOWN AREA 80 100 120 140 160 ( C) C –V (V) CEO Feb.1999 ...

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... T =125° FORWARD CURRENT QM200HC-M NON-INSULATED TYPE – (A) F Feb.1999 ...