qm75e2y-2h Mitsumi Electronics, Corp., qm75e2y-2h Datasheet - Page 3

• Manufacturer Part Number: qm75e2y-2h
• Description: Mitsubishi Transistor Modules
• Manufacturer: Mitsumi Electronics, Corp.

ELECTRICAL CHARACTERISTICS
PERFORMANCE CURVES
I
V
t
Q
R
R
RRM
rr
FM
th (j-c)
th (c-f)
rr
Symbol
Repetitive peak reverse current
Forward voltage
Reverse recovery time
Reverse recovery charge
Thermal resistance
Contact thermal resistance
10
100
10
10
80
60
40
20
–1
0
7
5
4
3
2
7
5
4
3
2
1
0
COLLECTOR-EMITTER VOLTAGE V
1.8
0
T
Parameter
BASE-EMITTER VOLTAGE V
j
=25°C
CHARACTERISTICS (TYPICAL)
COMMON EMITTER OUTPUT
CHARACTERISTIC (TYPICAL)
COMMON EMITTER INPUT
2.2
1
2.6
2
3.0
(Diode part (D2), T
V
I
I
Junction to case
Conductive grease applied (case to fin)
3
F
F
R
=75A
=75A, di/dt=–150A/ s, V
=V
V
T
RRM
j
CE
=25°C
=2.8V
3.4
I
I
I
I
I
, T
B
B
B
B
B
4
BE
=1.5A
=1.0A
=0.5A
=0.2A
=0.1A
j
=150 C
(V)
CE
3.8
(V)
5
j
=25 C)
Test conditions
R
=600V, T
j
=150 C
10
10
10
10
10
10
10
–1
7
5
4
3
2
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
1
0
10
4
3
2
1
10
0
0
COLLECTOR CURRENT (TYPICAL)
MITSUBISHI TRANSISTOR MODULES
2
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT I
COLLECTOR CURRENT I
V
2 3 4 5 7
3
BE(sat)
DC CURRENT GAIN VS.
SATURATION VOLTAGE
4
5
V
HIGH POWER SWITCHING USE
7
CE
10
=2.8V
QM75E2Y/E3Y-2H
1
Min.
2
—
—
—
—
—
—
10
3
4
1
I
B
5
=1.5A
V
7
Limits
Typ.
CE
2 3 4 5 7
—
—
—
—
—
—
10
T
T
=5.0V
j
j
=25°C
=125°C
2
V
T
T
2
CE(sat)
j
j
C
C
INSULATED TYPE
=25°C
=125°C
3
Max.
(A)
(A)
0.13
1.5
1.0
0.6
15
40
4
5
7
10
10
2
3
Feb.1999
Unit
C/ W
C/ W
mA
V
C
s