mds800 Microsemi Corporation, mds800 Datasheet

mds800

Manufacturer Part Number

mds800

Description

800 Watts, 50 Volts Pulsed Avionics At 1090 Mhz

Manufacturer

Microsemi Corporation

Datasheet

1.MDS800.pdf (2 pages)

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GENERAL DESCRIPTION

The MDS800 is a high power COMMON BASE bipolar transistor.

designed for pulsed systems at 1090 MHz, with the pulse width and duty

required for MODE-S applications. The device has gold thin-film metalization

and emitter ballasting for proven highest MTTF. The transistor includes input

and output prematch for broadband capability. Low thermal resistance package

reduces junction temperature, extends life.

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @ 25 C

Maximum Voltage and Current

Collector to Base Voltage (BV

Emitter to Base Voltage (BV

Collector Current (I

Maximum Temperatures

Storage Temperature

Operating Junction Temperature

ELECTRICAL CHARACTERISTICS @ 25 C

SYMBOL

VSWR

FUNCTIONAL CHARACTERISTICS @ 25 C

NOTES: 1. At rated output power and pulse conditions

Rev. B– Dec 2005

out

ebo

ces

Advanced Power Technology reserves the right to change, without notice, the specifications and information

2. 128 µs burst, 0.5 µs on/0.5 µs off, 6.4 ms period

contained herein. Visit our web site at

CHARACTERISTICS

Power Output

Power Input

Power Gain

Collector Efficiency

Return Loss

Power Droop

Load Mismatch Tolerance

Emitter to Base Breakdown

Collector to Emitter Breakdown

DC – Current Gain

Thermal Resistance

)

ebo

ces

)

-65 to +200 C

)

+200 C

1458 W

3.5 V

60 V

60 A

F = 1090 MHz

Burst width = 128µs

F = 1090 MHz

Vce = 5V, Ic = 1A

LTDF = 2%

Ie = 30 mA

Ic = 50 mA

www.advancedpower.com

= 50 Volts

TEST CONDITIONS

Pulsed Avionics at 1090 MHz

800 Watts, 50 Volts

or contact our factory direct.

It is

MDS800

MIN

800

8.6

3.5

CASE OUTLINE

(Common Base)

TYP

0.5

55ST-1

MAX

4.0:1

0.12

110

-12

UNITS

C/W

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mds800 Summary of contents

Page 1

... GENERAL DESCRIPTION The MDS800 is a high power COMMON BASE bipolar transistor. designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability ...

Page 2

... Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at or contact our factory direct. www.advancedpower.com MDS800 ...

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